Datasheet > 2N60I

2N60I

更新时间： 2023-12-06 20:03:06

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
7页	892K
描述
场效应晶体管

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2N60I 数据手册

2N60I/2N60D

Note:1. Absolute maximum ratings are those values beyond which the device could be permanently

damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not

implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=64mH, I_AS=2.0A, V_DD=50V, R_G=25 Ω, Starting T_J= 25°C

4. I_SD≤ 2.4A, di/dt ≤ 200A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C

ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

BV_DSS

ΔBV_DSS

ΔT_J

V_GS=0V,I_D=250μA

600

I_D=250UA

0.4

V/℃

μA

V_DS=600V, V_GS=0V

V_DS=480V,T_C=125℃

V_DS=0V, V_GS=30V

V_DS=0V, V_GS=-30V

V_DS=V_GS, I_D=250μA

V_GS=10V,I_D=1A,

100

-100

4.0

Zero Gate Voltage Drain Current

I_DSS

I_GSS

Gate-body Leakage

Forward

Reverse

Gate Threshold Voltage

V_GS(th)

R_DS(ON)

g_FS

2.0

Static drain-Source on-resistance

Forward transconductance

3.8

Ω

V_DS=50V,I_D=1A

(Note1)

2.25

270

350

Input Capacitance

C_iss

C_oss

C_rss

t_d(on)

t_R

Output Capacitance

V_DS=25V,V_GS=0V,f=1.0MHz

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

V_DD=300V,I_D=2.4A,R_G=25Ω

(Note1,2)

Turn-Off Delay Time

t_d(off)

t_f

Turn-Off Fall Time

Total Gate Charge

Q_g

9.0

1.6

4.3

V_DS=480V,I_D=2.4A,V_GS=10V

(Note1,2)

Gate-Source Charge

Gate-Drain Charge

Q_gs

Q_gd

Maximum Continuous Drain-Source

Diode Forward Current

Maximum Pulsed Drain-Source

Diode Forward Current

Drain-Sourse Recovery Charge

Reverse Recovery Time

Reverse Recovery Charge

Notes:

I_SD

I_SM

2.0

8.0

V_SD

t_rr

V_GS=0V,I_SD=2.0A

1.4

180

0.72

V_GS=0V,I_SD=2.4A,

dI_F/dt=100A/us (Note1)

Q_rr

μC

1. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%

2. Essentially Independent of Operating Temperature

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