Datasheet > 2N5667N1

2N5667N1

更新时间： 2024-02-14 15:27:33

品牌	Logo	应用领域
SEME-LAB		晶体开关晶体管
页数	文件大小	规格书
3页	344K
描述
NPN POWER SILICON SWITCHING TRANSISTOR

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技术参数
数据手册

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2N5667N1 技术参数

生命周期：	Active	包装说明：	HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.63	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	5 A	集电极-发射极最大电压：	300 V
配置：	SINGLE	最小直流电流增益 (hFE)：	5
JEDEC-95代码：	TO-276AA	JESD-30 代码：	R-CBCC-N3
元件数量：	1	端子数量：	3
最高工作温度：	200 °C	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	CHIP CARRIER
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	BOTTOM	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2N5667N1 数据手册

NPN POWER SILICON

SWITCHING TRANSISTOR

2N5667N1

•

Hermetic SMD0.5 Ceramic Surface Mount.

Ideally Suited for Power Amplifier and Switching Applications.

Screening Options Available

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

Continuous Collector Current

Base Current

400V

CBO

CEO

EBO

300V

1.0A

T = 25°C

Total Power Dissipation at

76W

Derate Above 25°C

0.43W/°C

-65 to +200°C

Junction Temperature Range

Storage Temperature Range

stg

THERMAL PROPERTIES

Symbols

Parameters

Thermal Resistance, Junction To Case - T = 25°C

Min.

Typ. Max. Units

2.3

°C/W

θJC

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Telephone +44 (0) 1455 556565

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 9189

Issue 1

Website: http://www.semelab-tt.com

Page 1 of 3

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