Datasheet > 2N4403/D

2N4403/D

更新时间： 2024-10-01 23:19:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	103K
描述
General Purpose Transistors

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中文翻译

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数据手册

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2N4403/D 数据手册

ON Semiconductort

General Purpose Transistors

PNP Silicon

2N4403

ON Semiconductor Preferred Device

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Symbol

Value

Unit

Vdc

CEO

Vdc

CBO

Emitter–Base Voltage

EBO

5.0

Vdc

Collector Current — Continuous

600

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

CASE 29–11, STYLE 1

TO–92 (TO–226AA)

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watt

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

COLLECTOR

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

qJA

BASE

83.3

qJC

EMITTER

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Breakdown Voltage

5.0

—

Vdc

(BR)CEO

(I = 1.0 mAdc, I = 0)

Collector–Base Breakdown Voltage

(I = 0.1 mAdc, I = 0)

(BR)CBO

(BR)EBO

Emitter–Base Breakdown Voltage

(I = 0.1 mAdc, I = 0)

—

Vdc

Base Cutoff Current

(V = 35 Vdc, V

0.1

µAdc

BEV

CEX

= 0.4 Vdc)

CE EB

Collector Cutoff Current

(V = 35 Vdc, V

—

CE EB

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

June, 2001 – Rev. 0

2N4403/D

12 3 4 5 6 7 8

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