5秒后页面跳转
2N3996 PDF预览

2N3996

更新时间: 2024-02-15 04:41:17
品牌 Logo 应用领域
SEMICOA 晶体晶体管
页数 文件大小 规格书
2页 170K
描述
Silicon NPN Transistor

2N3996 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-276AB
包装说明:CHIP CARRIER, R-CBCC-N3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.18外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-276ABJESD-30 代码:R-CBCC-N3
元件数量:1端子数量:3
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

2N3996 数据手册

 浏览型号2N3996的Datasheet PDF文件第2页 
2N3996  
Silicon NPN Transistor  
Data Sheet  
Description  
Applications  
High-speed power switching  
Power transistor  
Semicoa Semiconductors offers:  
NPN silicon transistor  
Screening and processing per MIL-PRF-19500 Appendix E  
JAN level (2N3996J)  
JANTX level (2N3996JX)  
JANTXV level (2N3996JV)  
QCI to the applicable level  
100% die visual inspection per MIL-STD-750 method  
2072 for JANTXV  
Features  
Hermetically sealed TO-x metal can  
Also available in chip configuration  
Chip geometry 9201  
Radiation testing (total dose) upon request  
Reference document:  
MIL-PRF-19500/374  
Benefits  
Qualification Levels: JAN, JANTX, and  
JANTXV  
Please contact Semicoa for special configurations  
www.SEMICOA.com or (714) 979-1900  
Radiation testing available  
Absolute Maximum Ratings  
TC = 25°C unless otherwise specified  
Parameter  
Collector-Emitter Voltage  
Collector-Base Voltage  
Symbol  
VCEO  
VCBO  
Rating  
80  
100  
Unit  
Volts  
Volts  
Volts  
A
Emitter-Base Voltage  
VEBO  
IC  
8
Collector Current, Continuous  
5
W
Power Dissipation, TA = 25°C  
Derate linearly above 25°C  
Power Dissipation, TC = 25°C  
Derate linearly above 25°C  
2
PT  
PT  
11.4  
mW/°C  
W
30  
300  
mW/°C  
°C/W  
Thermal Resistance  
3.33  
RθJC  
TJ  
°C  
°C  
Operating Junction Temperature  
Storage Temperature  
-65 to +200  
-65 to +200  
TSTG  
Semicoa Semiconductors, Inc.  
Copyright2002  
Rev. D  
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541  
Page 1 of 2  
www.SEMICOA.com  

与2N3996相关器件

型号 品牌 描述 获取价格 数据表
2N3996_1 MICROSEMI NPN POWER SWITCHING SILICON TRANSISTOR

获取价格

2N3996SMD SEME-LAB Bipolar NPN Device in a Hermetically sealed

获取价格

2N3996SMD05 SEME-LAB Bipolar NPN Device in a Hermetically sealed

获取价格

2N3997 SEMICOA Silicon NPN Transistor

获取价格

2N3997 SSDI 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS

获取价格

2N3997 MICROSEMI NPN POWER SWITCHING SILICON TRANSISTOR

获取价格