Datasheet > 2N3906L-T92-R

2N3906L-T92-R

更新时间： 2022-09-16 11:58:30

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描述
GENERAL PURPOSE APPLIATION

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数据手册

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2N3906L-T92-R 数据手册

2N3906

PNP EPITAXIAL PLANAR TRANSISTOR

ABSOLUTE MAXIMUM RATING ( T_A=25°С, unless otherwise specified )

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

-40

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-40

-5

-200

°С

Base Current

I_B

-50

Collector dissipation

Junction Temperature

Operating Temperature

Storage Temperature

P_C

625

T_J

125

T_OPR

T_STG

-20 ~ +85

-40 ~ +150

°С

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T_A=25°С, unless otherwise specified)

PARAMETER

SYMBOL

I_CEX

TEST CONDITIONS

V_CE=-30V, V_EB=-3V

MIN TYP MAX UNIT

Collector Cut-Off Current

-50

Base Cut-Off Current

I_BL

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

V_CBOI_C=-10μA, I_E=0

V_CEOI_C=-1mA, I_B=0 (Note)

V_EBOI_E=-10μA, I_C=0

-40

-6

h_FE1

h_FE2

h_FE3

h_FE4

h_FE5

V_CE=-1V, I_C=-0.1mA

V_CE=-1V, I_C=-1mA

V_CE=-1V, I_C=-10mA

V_CE=-1V, I_C=-50mA

V_CE=-1V, I_C=-100mA

DC Current Gain (Note)

100

300

V_CE(SAT)1I_C=-10mA, I_B=-1mA

V_CE(SAT)2I_C=-50mA, I_B=-5mA

V_BE(SAT)1I_C=-10mA, I_B=-1mA

V_BE(SAT)2I_C=-50mA, I_B=-5mA

-0.25

-0.4

Collector-Emitter Saturation Voltage

(Note)

-0.65

250

-0.85

-0.95

Base-Emitter Saturation Voltage

Transition Voltage

Output Capacitance

Turn On Time

f_T

V_CE=-20V, I_C=-10mA, f=100MHz

MHz

C_OB

t_ON

V_CB=-5V, I_E=0, f=1MHz

4.5

V_CC=-3V, V_BE=-0.5V, I_C=-10mA, I_B1=-1mA

I_B1=1_B2=-1mA

Turn Off Time

t_OFF

300

Note: Pulse test: P_W<=300μs, Duty Cycle<=2%

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

QW-R201-028, C

www.unisonic.com.tw

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