Datasheet > 2N3810_1

2N3810_1

更新时间： 2022-09-16 11:50:46

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
3页	115K
描述
PNP SILICON DUAL TRANSISTOR

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2N3810_1 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

PNP SILICON DUAL TRANSISTOR

Qualified per MIL-PRF-19500 /336

DYNAMIC CHARACTERISTICS (cont.)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Noise Figure

2N3810, L, U

F₁

7.0

I_C= 100μAdc, V_CE= 10Vdc, f = 100Hz, R_G= 3.0kΩ

2N3810, L, U

F₂

F₃

F₄

3.0

2.5

3.5

I_C= 100μAdc, V_CE= 10Vdc, f = 1.0kHz, R_G= 3.0kΩ

I_C= 100μAdc, V_CE= 10Vdc, f = 10kHz, R_G= 3.0kΩ

I_C= 100μAdc, V_CE= 10Vdc, f = 10Hz to 15.7kHz, R_G= 3.0kΩ

2N3811, L, U

F₁

F₂

F₃

F₄

4.0

1.5

2.0

2.5

I_C= 100μAdc, V_CE= 10Vdc, f = 100Hz, R_G= 3.0kΩ

I_C= 100μAdc, V_CE= 10Vdc, f = 1.0kHz, R_G= 3.0kΩ

I_C= 100μAdc, V_CE= 10Vdc, f = 10kHz, R_G= 3.0kΩ

I_C= 100μAdc, V_CE= 10Vdc, f = 10Hz to 15.7kHz, R_G= 3.0kΩ

T4-LDS-0118 Rev. 1 (091095)

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