TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /336
DEVICES
LEVELS
JAN
2N3810
2N3811
2N3810L
2N3810U
2N3811L
2N3811U
JANTX
JANTV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Symbol
VCEO
VCBO
VEBO
IC
Value
60
Unit
Vdc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
60
Vdc
5.0
50
Vdc
mAdc
One
Both
Section 1 Sections 2
PT
200 350
mW
°C
Total Power Dissipation @ TA = +25°C
TO-78
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
NOTES:
1. Derate linearly 1.143mW/°C for TA > +25°C (one section)
2. Derate linearly 2.000mW/°C for TA > +25°C (both sections)
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
V(BR)CEO
60
Vdc
IC = 100μAdc
U - Package
Collector-Base Cutoff Current
VCB = 50Vdc
VCB = 60Vdc
ηAdc
μAdc
10
10
ICBO
Emitter-Base Cutoff Current
VEB = 4.0Vdc
VEB = 5.0Vdc
10
10
ηAdc
μAdc
IEBO
T4-LDS-0118 Rev. 2 (110152)
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