Datasheet > 2N3810_1

2N3810_1

更新时间： 2022-09-16 11:50:46

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
3页	115K
描述
PNP SILICON DUAL TRANSISTOR

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数据手册

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2N3810_1 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

PNP SILICON DUAL TRANSISTOR

Qualified per MIL-PRF-19500 /336

DEVICES

LEVELS

2N3810

2N3811

JAN

2N3810L

2N3810U

2N3811L

2N3811U

JANTX

JANTV

JANS

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Emitter Voltage

Symbol

V_CEO

V_CBO

V_EBO

I_C

Value

Unit

Vdc

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Vdc

5.0

Vdc

mAdc

One

Both

Section ¹

Sections ²

P_T

200

350

°C

Total Power Dissipation

@ T_A= +25°C

Operating & Storage Junction Temperature

Range

T_J, T_stg

-65 to +200

TO-78

Note:

1. Derate linearly 1.143mW/°C for T_A> +25°C (one section)

2. Derate linearly 2.00mW/°C for T_A> +25°C (both sections)

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Symbol

Min.

Max.

Unit

Collector-Emitter Breakdown Voltage

V_(BR)CEO

Vdc

I_C= 100μAdc

Collector-Base Cutoff Current

V_CB= 50Vdc

ηAdc

μAdc

I_CBO

V_CB= 60Vdc

Emitter-Base Cutoff Current

V_EB= 4.0Vdc

V_EB= 5.0Vdc

ηAdc

μAdc

I_EBO

T4-LDS-0118 Rev. 1 (091095)

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