是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Contact Manufacturer | 零件包装代码: | TO-5 |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.46 | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 55 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 12 | JEDEC-95代码: | TO-5 |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 175 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 8.8 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 1 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3675E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 | |
2N3676 | SEME-LAB |
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Bipolar NPN Device in a Hermetically sealed TO39 Metal Package | |
2N3676 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 3A I(C), 90V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 | |
2N3676 | ASI |
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Transistor | |
2N3676E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 3A I(C), 90V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 | |
2N3677 | NJSEMI |
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SILICON EPITAXIAL JUNCTION | |
2N3678 | CENTRAL |
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Small Signal Transistors | |
2N3678 | ONSEMI |
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55V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 | |
2N3678LEADFREE | CENTRAL |
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Small Signal Bipolar Transistor, 0.0008A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-3 | |
2N3680 | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 30MA I(C) | TO-77 |