Datasheet > 2N3250A_1

2N3250A_1

更新时间： 2022-09-16 10:45:07

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
4页	131K
描述
PNP SILICON LOW POWER TRANSISTOR

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2N3250A_1 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PACKAGE DIMENSIONS

Dimensions

Inches Millimeters

Symbol

Notes

Min Max Min

.178 .195 4.52

.170 .210 4.32

.209 .230 5.31

Max

4.95

5.33

5.74

.100TP

2.54 TP

.016 .021 0.41

0.53

7, 8

.500 .750 12.70 19.05

.016 .019 0.41

.050

0.48

1.27

.250

.100

6.35

2.54

.040

1.02

1.22

1.17

0.25

3, 4

.028 .048 0.71

.036 .046 0.91

.010

45° TP

NOTES:

1. Dimension are in inches.

2. Millimeters are given for general information only.

3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm).

4. Dimension TL measured from maximum HD.

5. Body contour optional within zone defined by HD, CD, and Q.

6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)

radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by

direct methods or by the gauge and gauging procedure shown in figure 2.

7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled

in L1 and beyond LL minimum.

8. All three leads.

9. The collector shall be internally connected to the case.

10. Dimension r (radius) applies to both inside corners of tab.

11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

FIGURE 1. Physical dimensions (similar to TO-18).

T4-LDS-0093 Rev. 2 (101243)

Page 3 of 4

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