Datasheet > 2N3251AUB

2N3251AUB

更新时间： 2024-09-23 07:28:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
4页	131K
描述
PNP SILICON LOW POWER TRANSISTOR

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数据手册

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2N3251AUB 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PNP SILICON

LOW POWER TRANSISTOR

Qualified per MIL-PRF-19500/323

DEVICES

LEVELS

2N3250A

2N3251A

JAN

2N3250AUB

2N3251AUB

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Emitter Voltage

Symbol

V_CEO

V_CBO

V_EBO

I_C

Value

Unit

Vdc

Collector-Base Voltage

Emitter-Base Voltage

Vdc

5.0

Vdc

Collector Current

200

mAdc

Total Power Dissipation

@ T_A= +25°C ⁽¹⁾

@ T_C= +25°C ⁽¹⁾

0.36

1.2

P_T

Operating & Storage Junction Temperature Range

T_J, T_stg

-65 to +200

°C

TO-39 (TO-205AD)

THERMAL CHARACTERISTICS

Parameters / Test Conditions

Symbol

Max.

Unit

(1)

Thermal Resistance, Junction-to-Case

150

°C/W

R_θJC

Note:

1/ Consult 19500/323 for thermal curves

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

I_C= 10mAdc

Symbol

V_(BR)CEO

I_CEX

Min.

Max.

Unit

Vdc

Collector-Emitter Cutoff Voltage

_BE= 3.0Vdc, V_CE= 40Vdc

ηAdc

μAdc

UB Package

V_BE= 3.0Vdc, V_CE= 40Vdc

T_A= 150°C

Collector-Base Cutoff Current

μAdc

ηAdc

_CB= 60Vdc

I_CBO

V_CB= 40Vdc

Emitter-Base Cutoff Current

I_EBO

μAdc

ηAdc

_EB= 5.0Vdc

Collector-Emitter Cutoff Voltage

I_BEX

_BE= 3.0Vdc, V_CE= 40Vdc

T4-LDS-0093 Rev. 2 (101243)

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