Electrical Characteristics @ Tj = 25 °C
Symbol
Parameter
Conditions
Min Max Unit
OFF CHARACTERISTICS
V(BR)CBO Breakdown Voltage, Collector to Base
V(BR)EBO Breakdown Voltage, Emitter to Base
V(BR)CEO Breakdown Voltage, Collector to Emitter
Bias Cond. D, IC=10uAdc
Bias Cond. D, IE=10uAdc
Bias Cond. D, IC= 10mAdc, pulsed
Bias Cond. D, VCE=50Vdc
Bias Cond. D, VCB=60Vdc
Bias Cond. D, VEB= 4Vdc
75
6
50
Vdc
Vdc
Vdc
ICES
Collector to Emitter Cutoff Current
Collector to Base Cutoff Current
Emitter to Base Cutoff Current
50 nAdc
10 nAdc
10 nAdc
ICBO1
IEBO
ON CHARACTERISTICS
hFE1
hFE2
hFE3
hFE4
hFE5
Forward-Current Transfer Ratio
VCE=10Vdc, IC=0.1mAdc
VCE=10Vdc, IC=1.0mAdc
VCE=10Vdc, IC=10mAdc
VCE=10Vdc, IC=150mAdc, pulsed
VCE=10Vdc, IC=500mAdc, pulsed
IC=150mAdc, IB=15mAdc, pulsed
IC=500mAdc, IB=50mAdc, pulsed
IC=150mAdc, IB=15mAdc, pulsed
IC=500mAdc, IB=50mAdc, pulsed
50
75 325
100
100 300
30
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
VCE(sat)1 Collector to Emitter Saturation Voltage
VCE(sat)2 Collector to Emitter Saturation Voltage
VBE(sat)1
VBE(sat)2
0.3 Vdc
1 Vdc
0.6 1.2 Vdc
2 Vdc
Base to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
hfe
Short Circuit Forward Current Xfer Ratio
VCE= 10Vdc,IC =1mAdc, f= 1kHz
50
/hfe/
Magnitude of Short Circuit Forward
Current Transfer Ratio
Output Capacitance
VCE= 20Vdc,IC =50mAdc, f=100MHz
2.5
Cobo
Cibo
VCB= 10Vdc, IE =0, 100kHz< f <1MHz
VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz
8 pF
25 pF
Input Capacitance
SWITCHING CHARACTERISTICS
ton
toff
Saturated Turn-on Time
Saturated Turn-off Time
As defined in 19500/255 Figure 8
As defined in 19500/255 Figure 9
45 nS
300 nS
2