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2N2222A PDF预览

2N2222A

更新时间: 2024-01-27 07:35:36
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页数 文件大小 规格书
3页 56K
描述
NPN SILICON PLANAR SWITCHING TRANSISTORS

2N2222A 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMALL OUTLINE, R-CDSO-N6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.61最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:40 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):100JEDEC-95代码:MO-041BB
JESD-30 代码:R-CDSO-N6元件数量:2
端子数量:6封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

2N2222A 数据手册

 浏览型号2N2222A的Datasheet PDF文件第1页浏览型号2N2222A的Datasheet PDF文件第3页 
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N2221A to 2N2222A  
DESCRIPTION  
SYMBOL TEST CONDITION  
2221A 2222A  
UNIT  
DC Current Gain  
hFE  
IC=0.1mA,VCE=10V  
IC=1mA,VCE=10V  
IC=10mA,VCE=10V  
>20  
>25  
>35  
>35  
>50  
>75  
Ta=55 deg C  
IC=10mA,VCE=10V  
>15  
>35  
IC=150mA,VCE=10V 40-120 100-300  
IC=150mA,VCE=1V  
IC=500mA,VCE=10V  
>20  
>25  
>50  
>40  
DYNAMIC CHARACTERISTICS  
Small Signal Current Gain  
ALL f=1kHz  
IC=1mA, VCE=10V  
hfe  
30-150 50-300  
IC=10mA, VCE=10V 50-300 75-375  
IC=1mA, VCE=10V 1.0-3.5 2.0-8.0  
IC=10mA, VCE=10V 0.2-1.0 0.25-1.25  
Input Impedance  
hie  
kohms  
x10-4  
umhos  
ps  
Voltage Feedback Ratio  
Out put Admittance  
hre  
IC=1mA, VCE=10V  
IC=10mA, VCE=10V  
IC=1mA, VCE=10V  
<5.0  
<2.5  
3.0-15 5.0-35  
<8.0  
<4.0  
hoe  
rb'Cc  
IC=10mA, VCE=10V 10-100 25-200  
Collector Base Time Constant  
IE=20mA, VCB=20V  
f=31.8MHz  
IC=20mA, VCE=20V  
f=300MHz  
IC=100uA, VCE=10V  
Rs=1kohms, f=1kHz  
<150  
<60  
-
<150  
Real Part Common-Emitter High Frequency Re(hie)  
<60  
ohms  
dB  
Input Impedance  
Noise Figure  
NF  
<4.0  
DYNAMIC CHARACTERISTICS  
Transistors Frequency  
ft  
IC=20mA, VCE=20V  
f=100MHz  
VCB=10V, IE=0  
f=100kHz  
VEB=0.5V, IC=0  
f=100kHz  
>250  
<8.0  
<25  
>300  
<8.0  
<25  
MHz  
pF  
Out-Put Capacitance  
Input Capacitance  
Cob  
Cib  
pF  
SWITCHING Time  
Delay time  
Rise time  
td  
tr  
IC=150mA,IB1=15mA  
VCC=30V,VBE=0.5V  
<10  
<25  
ns  
ns  
-
Storage time  
Fall time  
ts  
tf  
IC=150mA, IB1=  
IB2=15mA, VCC=30V -  
<225  
<60  
ns  
ns  
*Pulse Condition: Pulse Width=300us, Duty Cycle=2%  
http://www.bocasemi.com  
page : 2  

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