5秒后页面跳转
2N2222A PDF预览

2N2222A

更新时间: 2023-12-06 20:03:30
品牌 Logo 应用领域
先科 - SWST 晶体管
页数 文件大小 规格书
5页 373K
描述
小信号晶体管

2N2222A 数据手册

 浏览型号2N2222A的Datasheet PDF文件第1页浏览型号2N2222A的Datasheet PDF文件第3页浏览型号2N2222A的Datasheet PDF文件第4页浏览型号2N2222A的Datasheet PDF文件第5页 
2N2222 / 2N2222A  
Characteristics at Ta = 25℃  
Parameter  
Symbol  
Min.  
Max.  
Unit  
DC Current Gain  
at VCE = 10 V, IC = 0.1 mA  
at VCE = 10 V, IC = 1 mA  
at VCE = 10 V, IC = 10 mA  
at VCE = 10 V, IC = 150 mA  
at VCE = 10 V, IC = 500 mA  
hFE  
hFE  
hFE  
hFE  
hFE  
hFE  
35  
50  
75  
100  
30  
40  
-
-
-
-
-
-
-
-
-
300  
-
-
2N2222  
2N2222A  
Collector Base Cutoff Current  
at VCB = 50 V  
at VCB = 60 V  
Collector Base Breakdown Voltage  
at IC = 10 µA  
2N2222  
2N2222A  
-
-
10  
10  
ICBO  
nA  
V
2N2222  
2N2222A  
60  
75  
-
-
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
Collector Emitter Breakdown Voltage  
at IC = 10 mA  
2N2222  
2N2222A  
30  
40  
-
-
V
Emitter Base Breakdown Voltage  
at IE = 10 µA  
2N2222  
2N2222A  
5
6
-
-
V
Collector Emitter Saturation Voltage  
at IC = 150 mA, IB = 15 mA  
2N2222  
2N2222A  
2N2222  
2N2222A  
-
-
-
-
0.4  
0.3  
1.6  
1
VCE(sat)  
V
V
at IC = 500 mA, IB = 50 mA  
Base Emitter Saturation Voltage  
at IC = 150 mA, IB = 15 mA  
2N2222  
2N2222A  
2N2222  
2N2222A  
-
0.6  
-
1.3  
1.2  
2.6  
2
VBE(sat)  
at IC = 500 mA, IB = 50 mA  
-
Gain Bandwidth Product  
at IC = 20 mA, VCE = 20 V, f = 100 MHz  
fT  
250  
-
-
MHz  
pF  
Collector Output Capacitance  
at VCB = 10 V, f = 1 MHz  
Cob  
8
2 / 5  
®
Dated : 28/06/2022 Rev:04  

与2N2222A相关器件

型号 品牌 描述 获取价格 数据表
2N2222A/TR MICROSEMI Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A

获取价格

2N2222A_02 SEMICOA Silicon NPN Transistor

获取价格

2N2222A_09 SEME-LAB HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR

获取价格

2N2222AB MICROSEMI SWITCHING TRANSISTOR NPN SILICON

获取价格

2N2222A-B MCC Transistor

获取价格

2N2222AB-# MICROSEMI Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, DIE PAC

获取价格