Datasheet > 2N2222A

2N2222A

更新时间： 2024-02-02 05:24:42

品牌	Logo	应用领域
泰科 - TE		PC 开关晶体管
页数	文件大小	规格书
6页	659K
描述
Radiation Hardened NPN Silicon Switching Transistors

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技术参数
数据手册

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2N2222A 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	4.27
Is Samacsys：	N	Base Number Matches：	1

2N2222A 数据手册

2N2221A, L, UA, UB &

2N2222A, L, UA, UB

Radiation Hardened NPN Silicon Switching Transistors

Rev. V1

Electrical Specifications @ T_A= 25°C

Parameter

Test Conditions

Symbol Units Minimum Maximum

Dynamic Characteristics:

I_C= 1 mAdc, V_CE= 10 Vdc, f = 1 kHz

2N2221A, L, UA, UB

Small-Signal Short-Circuit

Forward Current Transfer Ratio

hfe

—

2N2222A, L, UA, UB

Magnitude of Small-Signal Short-Circuit,

Forward Current Transfer Ratio

I_C= 20 mAdc, V_CE= 20 Vdc, f = 100 MHz | hfe |

2.5

V_CB= 10 Vdc, I_E= 0, 100 kHz ≤ f ≤ 1 MHz C_OBO

V_CB= 0.5 Vdc, I_E= 0, 100 kHz ≤ f ≤ 1 MHz C_1BO

Output Capacitance

—

Switching Characteristics:

Turn-On Time

Turn-Off Time

(See figure 17 of MIL-PRF-19500/255)

(See Figure 18 of MIL-PRF-19500/255)

T_ON

—

T_OFF

300

Absolute Maximum Ratings @ T_C= 25°C

Parameter

Absolute Maximum

50 Vdc

Collector - Emitter Voltage (V_CEO

)

Collector - Base Voltage (V_CBO

)

75 Vdc

Emitter - Base Voltage (V_EBO

)

6.0 Vdc

Collector Current (I_C)

800 mAdc

Total Power Dissipation (P_T) T_A= +25ºC

Thermal Resistance (R_ΘJC) Junction to Ambient

Operating Temperature

0.5 W

325 ºC/W

-65°C to +200°C

Storage Temperature

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

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