是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | POST/STUD MOUNT, O-MUPM-H3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.30.00.80 |
风险等级: | 5.8 | 配置: | SINGLE |
关态电压最小值的临界上升速率: | 200 V/us | 最大直流栅极触发电流: | 70 mA |
最大直流栅极触发电压: | 2.5 V | JEDEC-95代码: | TO-209AC |
JESD-30 代码: | O-MUPM-H3 | 湿度敏感等级: | 1 |
通态非重复峰值电流: | 1000 A | 元件数量: | 1 |
端子数量: | 3 | 最大通态电流: | 70000 A |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 峰值回流温度(摄氏度): | 225 |
认证状态: | Not Qualified | 最大均方根通态电流: | 110 A |
断态重复峰值电压: | 200 V | 重复峰值反向电压: | 200 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | NO |
端子形式: | HIGH CURRENT CABLE | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N1913E3 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 110A I(T)RMS, 200V V(RRM), 1 Element, TO-209AA, TO-94, 2 PIN | |
2N1913M | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 200V V(DRM), 200V V(RRM), 1 Elem | |
2N1914 | POWEREX |
获取价格 |
Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts | |
2N1914 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifiers | |
2N1914 | NJSEMI |
获取价格 |
High Power Silicon Controlled Rectifier 110 A RMS 25 to 1200 Volts | |
2N1914E3 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 110A I(T)RMS, 250V V(RRM), 1 Element, TO-209AA, TO-94, 2 PIN | |
2N1915 | NJSEMI |
获取价格 |
High Power Silicon Controlled Rectifier 110 A RMS 25 to 1200 Volts | |
2N1915 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifiers | |
2N1915 | POWEREX |
获取价格 |
Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts | |
2N1915E3 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 110A I(T)RMS, 300V V(RRM), 1 Element, TO-209AA, TO-94, 2 PIN |