2ED2109 (4) S06F (J)
650 V half bridge gate driver with integrated bootstrap diode
Description
The 2ED2109 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and
low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and
noise immunity with capability to maintain operational logic at negative voltages of up to - 11 V on VS pin (VCC
=
15 V) on transient voltages. There are not any parasitic thyristor structures present in the device, hence no
parasitic latch up may occur at all temperature and voltage conditions. The logic input is compatible with
standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power
MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V.
Up to 650V
Integrated
RBS DBS
Integrated
RBS DBS
Up to 650V
VCC
IN
14
13
12
1
2
3
4
5
6
7
VCC
IN
1
2
3
4
8
7
6
5
VCC
IN
VCC
VB
HO
VS
LO
VB
HO
SD
SD
DT
IN
TO LOAD
RDT
VS 11
TO LOAD
SD
SD
10
9
VSS
VSS
COM
LO
COM
8
2ED2109S06F
2ED21094S06J
* Bootstrap diode is monolithically integrated
* Please refer to our application notes and design tips for proper circuit board layout.
Figure 1
Typical application block diagram
Summary of feature comparison of the 2ED210x family:
Table 1
Cross
Input
logic
conduction
prevention
logic
Part No.
Deadtime
Ground pins tON / tOFF Package
2ED2106S06F
2ED21064S06J
2ED2108S06F
COM
DSO - 8
HIN, LIN
No
None
VSS / COM
COM
DSO - 14
DSO - 8
200 ns /
200 ns
Internal 540 ns
Yes
HIN, LIN
Programmable
540 ns - 5000 ns
2ED21084S06J
2ED2109S06F
2ED21094S06J
VSS / COM
COM
DSO - 14
DSO - 8
Internal 540 ns
Yes
IN, SD
Programmable
540 ns - 5000 ns
VSS / COM
740 ns / DSO - 14
200 ns
Programmable
540 ns - 2700 ns
2ED21091S06F IN, DT/SD Yes
COM
DSO – 8
Datasheet
www.infineon.com/soi
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V 2.022
2020-07-02