Datasheet > 2CL3509H

2CL3509H

更新时间： 2022-02-26 14:05:09

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描述
High Voltage Diodes

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2CL3509H 数据手册

2CL3509H 2CL3512H

High Voltage Diodes for Micro-Wave Oven

Power Semiconductor Technology

Features

Outline Dimensions and Mark

I_F

350mA

Unit mm

V_RRM

9kV ,12kV

Code Lot No.

7.5 0.5

High reliability

Cathode Mark

1.2 0.03

Applications

Rectification for high voltage power supply

of magnetron in Micro wave oven and others

22min

22 0.5

Type

Code

Cathode Mark

2CL3509H

T3509H

T3512H

2CL3512H

Limiting Values Absolute Maximum Rating

2CL3509H

2CL3512H

Item

Symbol Unit

V_RRM

I_F(AV)

I_FSM

I_RSM

T_(vj)

Repetitive Peak Reverse Voltage

Average Forward Current

Forward Surge Current

(50H_ZHalf-sine wave, Resistance load,T_a60

)

mA 350

50H_ZHalf-sine wave,1cycle,T_a=25

(W_P=1ms, Rectangular-wave, One-shot, T_a=25

)

mA 100

Reverse Surge Current

130

Virtual Junction Temperature

T_stg

-40 ~ +130

Storage Temperature

Cooling Requirement: Cathode terminal is fastened to radiating fin that size is more than 50mm 50mm 0.6mm Wind-cooled velocity is

more than 0.5m/s

Electrical Characteristics T_a=25 Unless otherwise specified

Item

Peak Forward Voltage

Peak Reverse Current

Symbol

Unit

Test Condition

I_FM=350mA

V_RM=V_RRM

2CL3509H

2CL3512H

V_FM

I_RRM1

Avalanche Breakdown Voltage

I_R=100 A

9.5

12.5

SiPower - The official marketing arm of Zhonghuan Semiconductor

http://www.sipower-inc.com

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