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2N6400

更新时间： 2024-01-25 19:54:49
品牌 Logo 应用领域
DIGITRON 栅栅极
页数 文件大小 规格书
6页 1679K
描述
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 50; Max TMS Bridge Input Voltage: 10; Max DC Reverse Voltage: 2; Capacitance: 40; Package: TO-220AB

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2N6400 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.30.00.80风险等级：5.68
外壳连接：ANODE标称电路换相断开时间：15 µs
配置：SINGLE最大直流栅极触发电流：30 mA
最大直流栅极触发电压：1.5 V最大维持电流：40 mA
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT认证状态：Not Qualified
最大均方根通态电流：16 A重复峰值关态漏电流最大值：10 µA
断态重复峰值电压：50 V重复峰值反向电压：50 V
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE触发设备类型：SCR
Base Number Matches：1

2N6400 数据手册

 浏览型号2N6400的Datasheet PDF文件第2页浏览型号2N6400的Datasheet PDF文件第3页浏览型号2N6400的Datasheet PDF文件第4页浏览型号2N6400的Datasheet PDF文件第5页浏览型号2N6400的Datasheet PDF文件第6页 
2N6400-2N6405  
SILICON CONTROLLED RECTIFIERS  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak repetitive off-state voltage (1)  
(TJ = -40 to 125°C, sine wave 50 to 60Hz, gate open)  
2N6400  
2N6401  
2N6402  
2N6403  
2N6404  
2N6405  
50  
VDRM  
VRRM  
100  
200  
400  
600  
800  
Volts  
On-state RMS current  
IT(RMS)  
Amps  
Amps  
(180° conduction angles), TC = 100°C)  
16  
10  
Average on-state current  
IT(AV)  
(180° conduction angles, TC = 100°C)  
Peak non-repetitive surge current  
ITSM  
I2t  
Amps  
A2s  
(1/2 cycle, sine wave 60Hz, TJ = 90°C)  
160  
145  
Circuit fusing (t = 8.3ms)  
Forward peak gate power  
PGM  
Watts  
≤ 1.0µs, T  
(pulse width  
C = 100°C)  
20  
Forward average gate power  
PG(AV)  
Watts  
Amps  
(t = 8.3ms, TC = 100°C)  
0.5  
Forward peak gate current  
IGM  
≤ 1.0µs, T  
(Pulse width  
C = 100°C)  
2.0  
Operating junction temperature range  
TJ  
-40 to 125  
°C  
°C  
Storage temperature range  
Tstg  
-40 to 150  
1.  
VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage, however, positive gate voltage shall not be applied concurrent with negative potential on  
the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
RӨJC  
Max  
1.5  
Unit  
°C/W  
°C  
Thermal resistance, junction to case  
Maximum lead temperature for soldering purposes 1/8” from case for 10 seconds  
TL  
260  
ELECTRICAL CHARACTERISTICS (TC = 25°C)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Peak repetitive forward or reverse blocking current  
(VAK = rated VDRM or VRRM, gate open)  
TJ = 25°C  
-
-
-
-
10  
µA  
IDRM, IRRM  
TJ = 125°C  
2.0  
mA  
ON CHARACTERISTICS  
Peak forward on-state voltage  
VTM  
Volts  
(ITM = 32A peak, pulse width ≤ 1ms, duty cycle ≤ 2%)  
-
-
1.7  
Rev. 20120924  
123456

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