Datasheet > 2N6400_12

2N6400_12

更新时间： 2022-04-20 14:07:05

品牌	Logo	应用领域
安森美 - ONSEMI		可控硅整流器
页数	文件大小	规格书
7页	114K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors 50 thru 800 VOLTS

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2N6400_12 数据手册

2N6400 Series

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls and power supplies; or wherever

half−wave silicon gate−controlled, solid−state devices are needed.

http://onsemi.com

Features

SCRs

16 AMPERES RMS

50 thru 800 VOLTS

• Glass Passivated Junctions with Center Gate Geometry for Greater

Parameter Uniformity and Stability

• Small, Rugged, Thermowatt Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

• Blocking Voltage to 800 V

• These are Pb−Free Devices

MAXIMUM RATINGS* (T = 25°C unless otherwise noted)

MARKING

DIAGRAM

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

DRM,

(T = *40 to 125°C, Sine Wave 50 to 60

RRM

Hz; Gate Open)

2N6400

100

200

400

600

800

2N6401

TO−220AB

CASE 221A

STYLE 3

2N640xG

AYWW

2N6402

2N6403

2N6404

2N6405

On-State Current RMS (180° Conduction

T(RMS)

Angles; T = 100°C)

Average On-State Current (180° Conduc-

T(AV)

tion Angles; T = 100°C)

= 0, 1, 2, 3, 4 or 5

Peak Non-repetitive Surge Current (1/2

160

TSM

= Assembly Location

= Year

= Work Week

Cycle, Sine Wave 60 Hz, T = 25°C)

Circuit Fusing Considerations (t = 8.3 ms)

I t

145

A s

= Pb−Free Package

Forward Peak Gate Power (Pulse Width ≤

1.0 ms, T = 100°C)

Forward Average Gate Power (t = 8.3 ms,

0.5

2.0

G(AV)

PIN ASSIGNMENT

Cathode

= 100°C)

Forward Peak Gate Current (Pulse Width ≤

Anode

1.0 ms, T = 100°C)

Gate

Operating Junction Temperature Range

Storage Temperature Range

−40 to

+125

°C

Anode

stg

−40 to

+150

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. V

and V

for all types can be applied on a continuous basis. Ratings

DRM

RRM

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Publication Order Number:

November, 2012 − Rev. 6

2N6400/D

12 3 4 5 6 7

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型号	品牌	描述	获取价格	数据表
2N6400-16	MOTOROLA	16A, 50V, SCR, TO-220AB, TO-220, 2 PIN	获取价格
2N6400-A	MOTOROLA	16A, 50V, SCR, TO-220AB	获取价格
2N6400-AC	MOTOROLA	Silicon Controlled Rectifier, 16A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB	获取价格
2N6400-AD	MOTOROLA	16A, 50V, SCR, TO-220AB	获取价格
2N6400-AF	MOTOROLA	Silicon Controlled Rectifier, 16A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB	获取价格
2N6400-AJ	MOTOROLA	16A, 50V, SCR, TO-220AB	获取价格

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