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29W040 PDF预览

29W040

更新时间: 2022-11-25 16:17:13
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
31页 206K
描述
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

29W040 数据手册

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M29W040  
Table 8. Status Register  
DQ  
Name  
Logic Level  
Definition  
Erase Complete  
Note  
’1’  
’0’  
Indicates the P/E.C. status, check during  
Program or Erase, and on completion  
before checking bits DQ5 for Program or  
Erase Success.  
Data  
Polling  
Erase on going  
7
DQ  
DQ  
Program Complete  
Program on going  
’-1-0-1-0-1-0-1-’ Erase or Program on going  
Successive read output complementary  
data on DQ6 while Programming or Erase  
operations are going on. DQ6 remain at  
constant level when P/E.C. operations are  
completed or Erase Suspend is  
Program (’0’ on DQ6)  
’-0-0-0-0-0-0-0-’  
6
Toggle Bit  
Error Bit  
Complete  
Erase or Program  
’-1-1-1-1-1-1-1-’  
acknowledged.  
(’1’ on DQ6) Complete  
’1’  
’0’  
’1’  
’0’  
’1’  
Program or Erase Error  
This bit is set to ’1’ if P/E.C. has exceded  
the specified time limits.  
5
4
Program or Erase on going  
Erase Timeout Period Expired P/E.C. Erase operation has started. Only  
possible command entry is Erase Suspend  
Erase  
3
Time Bit  
(ES). An additional block to be erased in  
parallel can be entered to the P/E.C.  
Erase Timeout Period on  
going  
’0’  
2
1
0
Reserved  
Reserved  
Reserved  
Note:  
Logic level ’1’ is High, ’0’ is Low. -0-1-0-0-0-1-1-1-0- represent bit value in successive Read operations.  
DQ6, or Error on DQ5 and Erase Timer DQ3 bits.  
Any read attempt during Program or Erase com-  
mand executionwillautomaticallyoutputthosefour  
bits. TheP/E.C. automaticallysetsbits DQ3, DQ5,  
DQ6 and DQ7. Other bits (DQ0, DQ1, DQ2 and  
DQ4) are reserved for future use and should be  
masked.  
Instructions and Commands  
The Command Interface (C.I.) latches commands  
written to the memory. Instructions are made up  
from one or more commands to perform Read  
Array/Reset, Read Electronic Signature, Power  
Down, Block Erase, Chip Erase, Program, Block  
Erase Suspend and Erase Resume. Commands  
are made of address and data sequences. Ad-  
dresses are latched on the falling edge of W or E  
and data is latched on the rising of W or E. The  
instructions require from 1 to 6 cycles, the first or  
first three of which are always write operations  
used to initiate thecommand.Theyarefollowed by  
either further write cycles to confirm the first com-  
mand orexecute the commandimmediately. Com-  
mand sequencing must be followed exactly. Any  
invalid combination of commands will reset the  
device to Read Array. The increased number of  
cycles has been chosen to assure maximum data  
security. Commands are initialised by two preced-  
ing codedcycleswhich unlockthe CommandInter-  
face.In addition,for Erase,command confirmation  
is againpreceeded by the two coded cycles.  
Data Polling bit (DQ7). When Programming op-  
erations are in progress, this bit outputs the com-  
plement of the bit being programmed on DQ7.  
During Erase operation,it outputsa 0’. After com-  
pletion of the operation,DQ7 will output the bit last  
programmed or a ’1’ after erasing. Data Polling is  
valid only effective during P/E.C. operation, that is  
after the fourth W pulse for programming or after  
the sixth W pulse for Erase. It must be performed  
at theaddressbeing programmedor at an address  
within the block being erased. If the byte to be  
programmedbelongsto a protectedblock thecom-  
mand is ignored. If all the blocks selected for era-  
sure are protected, DQ7 will set to ’0’ for about  
100µs, and then return to previous addressed  
memory data. See Figure 9 for the Data Polling  
flowchart and Figure 10 for the Data Polling wave-  
forms.  
P/E.C. status is indicated during command execu-  
tionby DataPolling onDQ7, detectionofToggleon  
8/31  

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