Datasheet > 存储 > EPROM> 27C512A-12VS

27C512A-12VS

更新时间： 2024-02-06 09:11:39

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
12页	73K
描述
512K (64K x 8) CMOS EPROM

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技术参数
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27C512A-12VS 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TSOP	包装说明：	8 X 20 MM, PLASTIC, TSOP-28
针数：	28	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.71
风险等级：	5.64	最长访问时间：	120 ns
其他特性：	DATA RETENTION >200 YEARS	I/O 类型：	COMMON
JESD-30 代码：	R-PDSO-G28	JESD-609代码：	e0
长度：	18.4 mm	内存密度：	524288 bit
内存集成电路类型：	OTP ROM	内存宽度：	8
功能数量：	1	端子数量：	28
字数：	65536 words	字数代码：	64000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	64KX8
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP1	封装等效代码：	TSSOP28/32,.8,20
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	5 V	认证状态：	Not Qualified
座面最大高度：	1.2 mm	最大待机电流：	0.00003 A
子类别：	OTP ROMs	最大压摆率：	0.035 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	8 mm
Base Number Matches：	1

27C512A-12VS 数据手册

27C512A

Since the erased state is “1” in the array, programming

of “0” is required. The address to be programmed is set

via pinsA0 -A15 and the data to be programmed is pre-

sented to pins O0 - O7. When data and address are

stable, a low going pulse on the CE line programs that

location.

1.3

Standby Mode

The standby mode is entered when the CE pin is high,

and the program mode is not identiﬁed.

When this conditions are met, the supply current will

drop from 25 mA to 30 µA.

1.7

Verify

1.4

Output Enable OE/VPP

After the array has been programmed it must be veriﬁed

to ensure all the bits have been correctly programmed.

This mode is entered when all the following conditions

are met:

This multifunction pin eliminates bus connection in mul-

tiple bus microprocessor systems and the outputs go to

high impedance when:

• the OE/VPP pin is high (VIH).

a) VCC is at the proper level,

b) the OE/VPP pin is low, and

c) the CE line is low.

When a VH input is applied to this pin, it supplies the

programming voltage (VPP) to the device.

1.5

Erase Mode (UV Windowed Versions)

1.8

Inhibit

Windowed products offer the ability to erase the mem-

ory array. The memory matrix is erased to the all “1's”

state as a result of being exposed to ultraviolet light. To

ensure complete erasure, a dose of 15 watt-second/

When programming multiple devices in parallel with dif-

ferent data, only CE needs to be under separate control

to each device. By pulsing the CE line low on a partic-

ular device, that device will be programmed; all other

devices with CE held high will not be programmed with

the data (although address and data will be available on

their input pins).

cm is required. This means that the device window

must be placed within one inch and directly underneath

an ultraviolet lamp with a wavelength of 2537 Ang-

stroms, intensity of 12,000 mW/cm for approximately

40 minutes.

1.9

Identity Mode

1.6

Programming Mode

In this mode speciﬁc data is output which identiﬁes the

manufacturer as Microchip Technology Inc. and the

device type. This mode is entered when PinA9 is taken

to VH (11.5V to 12.5V). The CE and OE/VPP lines must

be at VIL. A0 is used to access any of the two non-eras-

able bytes whose data appears on O0 through O7.

The Express algorithm must be used for best results. It

has been developed to improve programming yields

and throughput times in a production environment. Up

to 10 100-microsecond pulses are applied until the byte

is veriﬁed. A ﬂowchart of the Express algorithm is

shown in Figure 1-3.

Programming takes place when:

Identity

Input

Output

a) VCC is brought to the proper voltage,

b) OE/VPP is brought to the proper VH level, and

c) CE line is low.

0 O O O O O O O

Manufacturer

Device Type*

VIL

VIH

* Code subject to change

DS11173E-page 6

1996 Microchip Technology Inc.

1...3 4 567 8 9...12

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