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27291SL PDF预览

27291SL

更新时间: 2024-02-23 05:16:32
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
15页 569K
描述
RF Power Field Effect Transistor

27291SL 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8532.30.00.90
风险等级:2.31调节器方向:HORIZONTAL
最大电容:8 pF最小电容:0.8 pF
电容器类型:VARIABLE CAPACITOR直径:1.78 mm
介电材料:SAPPHIRE长度:12.19 mm
安装特点:SURFACE MOUNT多匝:1
最高工作温度:125 °C最低工作温度:-65 °C
封装形式:Panel Mount额定(直流)电压(URdc):500 V
表面贴装:YES端子形状:FLAT
Base Number Matches:1

27291SL 数据手册

 浏览型号27291SL的Datasheet PDF文件第1页浏览型号27291SL的Datasheet PDF文件第2页浏览型号27291SL的Datasheet PDF文件第4页浏览型号27291SL的Datasheet PDF文件第5页浏览型号27291SL的Datasheet PDF文件第6页浏览型号27291SL的Datasheet PDF文件第7页 
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 920-960 MHz, 50 ohm system) V = 28 Vdc,  
DD  
I
= 350 mA, P = 16 W Avg., f = 920-960 MHz, GSM EDGE Signal  
out  
DQ  
Power Gain  
G
20  
46  
dB  
%
ps  
Drain Efficiency  
η
D
Error Vector Magnitude  
Spectral Regrowth at 400 kHz Offset  
Spectral Regrowth at 600 kHz Offset  
EVM  
SR1  
SR2  
1.5  
-62  
-78  
%
dBc  
dBc  
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 920-960 MHz, 50 ohm system) V = 28 Vdc, I = 350 mA,  
DD  
DQ  
P
= 45 W, f = 920-960 MHz  
out  
Power Gain  
G
20  
dB  
%
ps  
Drain Efficiency  
Input Return Loss  
η
68  
-12  
52  
D
IRL  
dB  
W
P
@ 1 dB Compression Point  
P1dB  
out  
(f = 940 MHz)  
Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 350 mA, 865-900 MHz Bandwidth  
DD  
DQ  
Video Bandwidth @ 48 W PEP P where IM3 = -30 dBc  
VBW  
MHz  
out  
(Tone Spacing from 100 kHz to VBW)  
10  
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both  
sidebands)  
Gain Flatness in 35 MHz Bandwidth @ P = 10 W Avg.  
G
0.72  
dB  
out  
F
Gain Variation over Temperature  
ΔG  
0.011  
dB/°C  
(-30°C to +85°C)  
Output Power Variation over Temperature  
ΔP1dB  
0.006  
dBm/°C  
(-30°C to +85°C)  
MRFE6S9045NR1  
RF Device Data  
Freescale Semiconductor  
3

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