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24C65 PDF预览

24C65

更新时间: 2024-01-05 22:27:43
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
16页 113K
描述
64K 5.0V I 2 C Smart Serial EEPROM

24C65 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:5.28 MM, ROHS COMPLIANT, PLASTIC, SOIJ-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.19
最大时钟频率 (fCLK):0.4 MHzJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:5.245 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:8192 words
字数代码:8000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:8KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:2.03 mm串行总线类型:I2C
最大供电电压 (Vsup):6 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:5.23 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

24C65 数据手册

 浏览型号24C65的Datasheet PDF文件第7页浏览型号24C65的Datasheet PDF文件第8页浏览型号24C65的Datasheet PDF文件第9页浏览型号24C65的Datasheet PDF文件第11页浏览型号24C65的Datasheet PDF文件第12页浏览型号24C65的Datasheet PDF文件第13页 
24C65  
FIGURE 8-1: CONTROL SEQUENCE BIT ASSIGNMENTS  
Control Byte  
Address Byte 1  
Address Byte 0  
Configuration Byte  
A
7
A
0
A A A R  
A
A A A A  
B B B B  
2
3 1 0  
X
R X  
1
0
1
0
S
0
0
2
1
0 W  
12 1110 9  
8
S/HE  
Slave Device  
Address Select  
Bits  
Block  
Count  
Security Read  
Acknowledge  
from  
No  
ACK  
S
Master  
S
t
Acknowledges from Device  
t
a
r
Data from Device  
Data from Device  
o
p
R
t
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
A A  
A
0
B
2
N N N N  
1
1
B
3
B B  
X X X X X  
X X X X X X X  
X
X
X X X  
1
1
0
1
0
0
1
X X  
X
1
1
X
1
1
1
1
1
2
1
3
2
1 0  
1
0
S/HE  
Starting Block  
Number  
Number of  
Blocks to  
Protect  
Security Write  
S
S
t
t
Acknowledges from Device  
a
r
o
p
t
R
0
A
C
K
A
C
K
A
C
K
A
C
K
A A  
A
0
N N N N  
X
B B B  
B
0
X
X X X X X X X  
1
0
1
0
0
1
X X  
X
1
X
2
1
2
3 1 0  
3
2
1
S/HE  
Starting Block  
Number  
Number of  
Blocks to  
Protect  
High Endurance Block Read  
No  
S
t
ACKS  
t
a
r
t
Acknowledges from Device  
o
p
Data from Device  
R
1
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
A A  
A
0
B
2
B
3
B B  
0
X X X X X  
X X X X X X X  
X
X
X X X  
1
1
1
0
1
0
0
1
X X  
X
0
X
1
1
2
1
1
S/HE  
High Endurance  
Block Number  
High Endurance Block Write  
S
S
t
t
Acknowledges from Device  
a
r
o
p
t
R
0
A
C
K
A
C
K
A
C
K
A
C
K
A A  
A
0
B B B  
B
0
X
X X X X X X X  
X
0 0 0  
0
1
0
1
0
0
1
X X  
X
0
X
2
1
3
2
1
S/HE  
High Endurance  
Block Number  
DS21058G-page 10  
1996 Microchip Technology Inc.  

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