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24AA01H-I/ST

更新时间： 2024-02-07 19:51:30

品牌	Logo	应用领域
美国微芯 - MICROCHIP		存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数	文件大小	规格书
30页	513K
描述
1K I2C™ Serial EEPROM with Half-Array Write-Protect

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24AA01H-I/ST 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	SOIC
包装说明：	TSSOP, TSSOP8,.25	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	风险等级：	5.41
最大时钟频率 (fCLK)：	0.1 MHz	数据保留时间-最小值：	200
耐久性：	1000000 Write/Erase Cycles	I2C控制字节：	1010XXXR
JESD-30 代码：	R-PDSO-G8	JESD-609代码：	e3
长度：	3 mm	内存密度：	1024 bit
内存集成电路类型：	EEPROM	内存宽度：	8
湿度敏感等级：	1	功能数量：	1
端子数量：	8	字数：	128 words
字数代码：	128	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	128X8	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP	封装等效代码：	TSSOP8,.25
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：	SERIAL	峰值回流温度（摄氏度）：	260
电源：	2/5 V	认证状态：	Not Qualified
反向引出线：	NO	座面最大高度：	1.2 mm
串行总线类型：	I2C	最大待机电流：	0.000001 A
子类别：	EEPROMs	最大压摆率：	0.003 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	1.7 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Matte Tin (Sn)
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
宽度：	4.4 mm	最长写入周期时间 (tWC)：	5 ms
写保护：	HARDWARE	Base Number Matches：	1

24AA01H-I/ST 数据手册

24AA01H/24LC01BH

5.2

Page Write

5.0

5.1

WRITE OPERATION

Byte Write

The write control byte, word address and first data byte

are transmitted to the 24XX01H in the same way as in

a byte write. However, instead of generating a Stop

condition, the master transmits up to 8 data bytes to the

24XX01H, which are temporarily stored in the on-chip

page buffer and will be written into the memory once

the master has transmitted a Stop condition. Upon

receipt of each word, the four lower-order Address

Pointer bits are internally incremented by ‘1’. The

higher-order 7 bits of the word address remain

constant. If the master should transmit more than 8

words prior to generating the Stop condition, the

address counter will roll over and the previously

received data will be overwritten. As with the byte write

operation, once the Stop condition is received, an

internal write cycle will begin (Figure 5-2).

Following the Start condition from the master, the

device code (4 bits), the block address (3 bits, “don’t

cares”) and the R/W bit, which is a logic low, is placed

onto the bus by the master transmitter. This indicates to

the addressed slave receiver that a byte with a word

address will follow after it has generated an Acknowl-

edge bit during the ninth clock cycle. Therefore, the

next byte transmitted by the master is the word address

and will be written into the Address Pointer of the

24XX01H. After receiving another Acknowledge signal

from the 24XX01H, the master device will transmit the

data word to be written into the addressed memory

location. The 24XX01H acknowledges again and the

master generates a Stop condition. This initiates the

internal write cycle, and, during this time, the 24XX01H

will not generate Acknowledge signals (Figure 5-1).

Note:

Page write operations are limited to writing

bytes within single physical page

regardless of the number of bytes

actually being written. Physical page

boundaries start at addresses that are

integer multiples of the page buffer size (or

‘page size’) and end at addresses that are

integer multiples of [page size – 1]. If a

Page Write command attempts to write

across a physical page boundary, the

result is that the data wraps around to the

beginning of the current page (overwriting

data previously stored there), instead of

being written to the next page, as might be

expected. It is therefore necessary for the

application software to prevent page write

operations that would attempt to cross a

page boundary.

FIGURE 5-1:

BYTE WRITE

Bus Activity

Master

Control

Byte

Word

Address

Data

SDA Line

Block

Select

Bits

Bus Activity

x= “don’t care”

FIGURE 5-2:

PAGE WRITE

Bus Activity

Master

Control

Byte

Word

Address (n)

Data (n)

Data (n + 1)

Data (n + 7)

x x

SDA Line

10 10

Block

Select

Bits

Bus Activity

x= “don’t care”

DS22104A-page 8

1...5 6 789 10 11...30

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与24AA01H-I/ST相关器件

型号	品牌	描述	获取价格	数据表
24AA01HT	MICROCHIP	1K I2C™ Serial EEPROM with Half-Array Write-P	获取价格
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24AA01HT-E/MNY	MICROCHIP	1K I2C™ Serial EEPROM with Half-Array Write-P	获取价格
24AA01HT-E/MS	MICROCHIP	1K I2C™ Serial EEPROM with Half-Array Write-P	获取价格
24AA01HT-E/OT	MICROCHIP	1K I2C™ Serial EEPROM with Half-Array Write-P	获取价格
24AA01HT-E/P	MICROCHIP	1K I2C™ Serial EEPROM with Half-Array Write-P	获取价格

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