Datasheet > 2115B150M0000TBC

2115B150M0000TBC

更新时间： 2023-02-26 15:41:17

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
26页	1219K
描述
Sine Output Oscillator,

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2115B150M0000TBC 数据手册

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MICROCIRCUIT ENHANCED ELEMENT EVALUATION

Mil-PRF-

38534

Subgroup Class

Test

Mil-STD-883

Quantity

Reference

Paragraph

Method

Condition

(accept number)

Element Electrical

A. May perform at wafer level

B. All failures shall be removed

from the lot

100%

C.3.3.1

C. Perform at room ambient

Element Visual

Internal Visual

2010

100%

10(0) or 22(0)

(See Notes 1 & 2)

C.3.3.2

C.3.3.3

C.3.3.4.2

Temperature Cycling

Mechanical Shock

1010

2002

B, Y1

direction

3,000 G, Y1

direction

C.3.3.3

10(0)

22(0)

(See Notes 1 & 2)

Constant Acceleration

2001

Interim Electrical

Burn-In

C.3.3.4.3

240 hours

minimum at

+125°C

1015

1005

Post Burn-In Electrical

Steady State Life

Final Electrical

C.3.3.4.3

10(0) wires or

20(1) wires

See method 2018

& Note 2

C.3.3.3

C.3.3.5

Wire Bond Evaluation

SEM

2011

2018

C.3.3.6

NOTES:

1. Subgroups 3, 4, & 5 shall be performed on a sample of 10 die if the wafer lot is from a QPL/QML line. If the die are

from commercial wafer lots, then the sample size shall be 22 die. Die from QPL/QML wafers not meeting the QPL/QML

requirements and downgraded to commercial grade shall not be used.

2. Subgroups 3, 4 & 5 shall be performed in the order listed in Table 1. Subgroup 6 may be performed at any time.

CODE IDENT NO.

UNSPECIFIED TOLERANCES

SIZE

DWG NO.

REV.

SHEET

00136

N/A

DOC200103

1...21 22 232425 26

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