Datasheet > 1ST112WS

1ST112WS

更新时间： 2024-02-08 02:36:29

品牌	Logo	应用领域
商升特 - SEMTECH		二极管开关局域网
页数	文件大小	规格书
3页	305K
描述
SILICON EPITAXIAL PLANAR SWITCHING DIODES

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中文翻译

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数据手册

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1ST112WS 数据手册

1ST112WS

SILICON EPITAXIAL PLANAR SWITCHING DIODES

PINNING

DESCRIPTION

Cathode

Anode

Top View

Marking Code: "W2"

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Peak Reverse Voltage

V_RM

V_R

Reverse Voltage

Average Forward Current

Peak Forward Current

I_F(AV)

I_FM

200

600

Non-Repetitive Peak Forward Surge Current (t = 1 s)

Junction Temperature

I_FSM

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

V_F

Max.

1.1

Unit

Forward Voltage

at I_F= 200 mA

Reverse Current

at V_R= 15 V

at V_R= 35 V

500

I_R

Total Capacitance

at V_R= 0 V, f = 1 MHz

C_T

t_rr

Reverse Recovery Time

at V_R= 6 V, I_F= 10 mA, I_rr= 0.1·I_R, R_L= 100 Ω

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 07/04/2009

12 3

中文翻译

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