Datasheet > 1SS133

1SS133

更新时间： 2023-12-06 20:08:39

品牌	Logo	应用领域
先科 - SWST		开关小信号开关二极管
页数	文件大小	规格书
2页	662K
描述
小信号开关二极管

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中文翻译

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数据手册

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1SS133 数据手册

1SS133

Silicon Epitaxial Planar Switching Diode

Features

• Glass sealed envelope

• High speed

• High reliability

Applications

• High-speed switching

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_RM

Value

Unit

Peak Reverse Voltage

DC Reverse Voltage

V_R

Average Rectified Forward Current

I_F(AV)

130

Peak Forward Current

I_FM

400

Surge Forward Current at t < 1 s

I_FSM

600

Power Dissipation

P_tot

T_j

300

Junction Temperature

Storage Temperature Range

175

T_stg

- 65 to + 175

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

500

Unit

Thermal Resistance - Junction to Ambient ¹⁾

¹⁾Valid provided that leads at a distance of 8 mm from case are kept at ambient temperat.

Characteristics at T_a= 25 C

Parameter

Symbol

V_F

Max.

1.2

Unit

Forward Voltage

at I_F= 100 mA

Reverse Current

at V_R= 80 V

I_R

C_T

t_rr

0.5

µA

Capacitance between Terminals

at V_R= 0.5 V, f = 1 MHz

Reverse Recovery Time

at I_F= 10 mA, I_rr= 1 mA , V_R= 6 V, R_L= 100 Ω

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Dated : 25/05/2023 Rev: 03

中文翻译

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