Datasheet > 1SS133_15

1SS133_15

更新时间： 2022-02-26 14:57:53

品牌	Logo	应用领域
永而佳 - WINNERJOIN		/
页数	文件大小	规格书
3页	120K
描述
High-speed switching diode

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1SS133_15 数据手册

RoHS

1SS133

High-speed switching diode

Features

1. Glass sealed envelope.

2. High reliability.

3. High speed.

Applications

High speed switching

Construction

Silicon epitaxial planar

Absolute Maximum Ratings

T_a=25℃

Parameter

Symbol

V_RM

V_R

Limits

Unit

Parameter

Symbol

I_surge

Value

600

Unit

℃

Peak reverse voltage

DC reverse voltage

Peak forward current

Mean rectifying current

Surge current(1s)

Power dissipation

Junction temperature

Storage temperature

300

I_FM

400

130

T_j

175

I_o

T_stg

-65~+175

℃

Electrical Characteristics

T_a=25℃

Parameter

Forward voltage

Symbol

Min.

Typ.

0.92

0.02

1.55

1.5

Max.

1.2

0.5

Unit

Conditions

V_F

I_R

I_F=100mA

Reverse current

μA

V_R=80V

Capacitance between terminals

Reverse recovery time

C_T

t_rr

V_R=0.5V,f=1MHz

V_R=6V,I_F=10mA,R_L=50

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