Datasheet > 1SS133M_15

1SS133M_15

更新时间： 2024-10-31 01:15:43

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	223K
描述
300mW, Hermetically Sealed Glass Switching Diodes

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中文翻译

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数据手册

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1SS133M_15 数据手册

1SS133M

Taiwan Semiconductor

Small Signal Product

300mW, Hermetically Sealed Glass Switching Diodes

FEATURES

- Fast switching device (t_rr< 4.0 ns)

- Through-hole mount device type

- DO-34 package (JEDEC DO-204)

- Hermetically sealed glass

- Compression bonded construction

- All external surfaces are corrosion resistant

and leads are readily solderable

- RoHS compliant

DO-34

- Solder hot dip Tin (Sn) lead finish

- Cathode indicated by polarity band

- Marking code: 133

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

PARAMETER

VALUE

SYMBOL

P_D

UNIT

Power Dissipation

300

Working Inverse Voltage

Average Rectified Current

W_IV

I_O

150

^oC

Non-Repetitive Peak Forward Current

Peak Forward Surge Current

I_FM

450

I_FSURGE

T_J

Operating Junction Temperature

Storage Temperature Range

+ 175

-65 to +200

T_STG

PARAMETER

MIN

MAX

SYMBOL

UNIT

I_R=500nA

I_F=100mA

V_R=80V

Breakdown Voltage

B_V

V_F

I_R

Forward Voltage

1.2

500

4.0

Reverse Leakage Current

Junction Capacitance

Reverse Recovery Time

V_R=0, f=1.0MHz

(Note 1)

C_j

t_rr

Notes: 1. Reverse Recovery Test Conditions: I_F=I_R=10mA, R_L=100Ω, I_RR=1mA

Document Number: DS_S1403003

Version: C15

12 3 4

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