1SMA10CAT3 Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
P
400
W
PK
@ T = 25°C, Pulse Width = 1 ms
L
DC Power Dissipation @ T = 75°C
P
1.5
W
L
D
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
20
50
mW/°C
°C/W
R
q
JL
DC Power Dissipation (Note 3) @ T = 25°C
P
0.5
4.0
250
W
mW/°C
°C/W
A
D
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
R
q
JA
Operating and Storage Temperature Range
T , T
−65 to +150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
I
Symbol
Parameter
I
PP
I
Maximum Reverse Peak Pulse Current
PP
V
Clamping Voltage @ I
PP
C
I
T
V
Working Peak Reverse Voltage
I
R
BR RWM
V
V
V
RWM
C
V
I
I
V
V
V
R
T
RWM BR C
I
Maximum Reverse Leakage Current @ V
R
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
I
PP
Bi−Directional TVS
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