RoHS
RoHS
1PT Series
SEMICONDUCTOR
Sensitive gate SCRs, 1A
Main Features
Symbol
Value
1
Unit
IT(RMS)
A
VDRM/VRRM
IGT
V
600 to 800
10 to 200
µA
DESCRIPTION
Thanks to highly sensitive triggering levels, the 1PT
series is suitable for all applications where the available
gate current is limited, such as capacitive discharge
ignitions, motor control in kitchen aids, overvoltage
crowbar protection in low power supplies among others.
A
TO-92
(1PTxxE)
G
K
3(A)
Available in through-hole or surface-mount packages,
they provide an optimized performance in a limited
space area.
2(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
UNIT
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
Tc =85ºC
Tc =85ºC
1
A
Average on-state current
(180° conduction angle)
IT(AV)
0.6
A
F =50 Hz
F =60 Hz
t = 20 ms
t = 16.7 ms
tp = 10 ms
12
13
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
I2t Value for fusing
A2s
A/µs
I2t
0.72
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
dI/dt
50
F = 60 Hz
Tp = 20 µs
Tj = 110ºC
Tj = 110ºC
IGM
PGM
0.5
A
Peak gate current
0.5
W
W
TA=25°C, Pulse width≤0.1µs
Forward peak gate power
Average gate power dissipation
Repetitive peak off-state voltage
PG(AV)
VDRM
VRRM
Tstg
Tj =110ºC
0.1
Tj =25ºC
600 and 800
V
Repetitive peak reverse voltage
Storage temperature range
- 40 to + 150
- 40 to + 110
ºC
Tj
Operating junction temperature range
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