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1PTxxE08 PDF预览

1PTxxE08

更新时间: 2024-11-20 01:04:51
品牌 Logo 应用领域
尼尔 - NELLSEMI /
页数 文件大小 规格书
4页 383K
描述
Sensitive gate SCRs, 1A

1PTxxE08 数据手册

 浏览型号1PTxxE08的Datasheet PDF文件第2页浏览型号1PTxxE08的Datasheet PDF文件第3页浏览型号1PTxxE08的Datasheet PDF文件第4页 
RoHS  
RoHS  
1PT Series  
SEMICONDUCTOR  
Sensitive gate SCRs, 1A  
Main Features  
Symbol  
Value  
1
Unit  
IT(RMS)  
A
VDRM/VRRM  
IGT  
V
600 to 800  
10 to 200  
µA  
DESCRIPTION  
Thanks to highly sensitive triggering levels, the 1PT  
series is suitable for all applications where the available  
gate current is limited, such as capacitive discharge  
ignitions, motor control in kitchen aids, overvoltage  
crowbar protection in low power supplies among others.  
A
TO-92  
(1PTxxE)  
G
K
3(A)  
Available in through-hole or surface-mount packages,  
they provide an optimized performance in a limited  
space area.  
2(G)  
1(K)  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUE  
UNIT  
RMS on-state current full sine wave  
(180° conduction angle )  
IT(RMS)  
Tc =85ºC  
Tc =85ºC  
1
A
Average on-state current  
(180° conduction angle)  
IT(AV)  
0.6  
A
F =50 Hz  
F =60 Hz  
t = 20 ms  
t = 16.7 ms  
tp = 10 ms  
12  
13  
Non repetitive surge peak on-state  
ITSM  
A
current (full cycle, T initial = 25°C)  
j
I2t Value for fusing  
A2s  
A/µs  
I2t  
0.72  
Critical rate of rise of on-state current  
IG = 2xlGT, tr≤100ns  
dI/dt  
50  
F = 60 Hz  
Tp = 20 µs  
Tj = 110ºC  
Tj = 110ºC  
IGM  
PGM  
0.5  
A
Peak gate current  
0.5  
W
W
TA=25°C, Pulse width≤0.1µs  
Forward peak gate power  
Average gate power dissipation  
Repetitive peak off-state voltage  
PG(AV)  
VDRM  
VRRM  
Tstg  
Tj =110ºC  
0.1  
Tj =25ºC  
600 and 800  
V
Repetitive peak reverse voltage  
Storage temperature range  
- 40 to + 150  
- 40 to + 110  
ºC  
Tj  
Operating junction temperature range  
Page 1 of 4  
www.nellsemi.com  

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