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1N755ADRL2 PDF预览

1N755ADRL2

更新时间： 2024-01-17 17:16:48
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 测试二极管
页数 文件大小 规格书
8页 69K
描述
7.5V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN

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1N755ADRL2 技术参数

生命周期：Obsolete零件包装代码：DO-35
包装说明：O-LALF-W2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.03
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：ZENER DIODE
JEDEC-95代码：DO-204AHJESD-30 代码：O-LALF-W2
元件数量：1端子数量：2
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM极性：UNIDIRECTIONAL
最大功率耗散：0.5 W认证状态：Not Qualified
标称参考电压：7.5 V表面贴装：NO
技术：ZENER端子形式：WIRE
端子位置：AXIAL最大电压容差：1%
工作测试电流：20 mABase Number Matches：1

1N755ADRL2 数据手册

 浏览型号1N755ADRL2的Datasheet PDF文件第1页浏览型号1N755ADRL2的Datasheet PDF文件第2页浏览型号1N755ADRL2的Datasheet PDF文件第4页浏览型号1N755ADRL2的Datasheet PDF文件第5页浏览型号1N755ADRL2的Datasheet PDF文件第6页浏览型号1N755ADRL2的Datasheet PDF文件第7页 
GENERAL DATA — 500 mW DO-35 GLASS  
APPLICATION NOTE — ZENER VOLTAGE  
500  
400  
300  
200  
100  
0
Since the actual voltage available from a given zener diode  
is temperature dependent, it is necessary to determine junc-  
tiontemperatureunderanysetofoperatingconditionsinorder  
to calculate its value. The following procedure is recom-  
mended:  
L
L
Lead Temperature, T , should be determined from:  
L
T = θ  
L
P
LA D  
+ T .  
A
2.4–60 V  
θ
isthelead-to-ambientthermalresistance(°C/W)andP is  
LA  
D
the power dissipation. The value forθ willvaryanddepends  
onthedevicemountingmethod.θ isgenerally30to40°C/W  
for the various clips and tie points in common use and for  
printed circuit board wiring.  
LA  
62–200 V  
0.6  
LA  
0
0.2  
0.4  
0.8  
1
The temperature of the lead can also be measured using a  
thermocoupleplacedontheleadascloseaspossibletothetie  
point. The thermal mass connected to the tie point is normally  
large enough so that it will not significantly respond to heat  
surges generated in the diode as a result of pulsed operation  
once steady-state conditions are achieved. Using the mea-  
L, LEAD LENGTH TO HEAT SINK (INCH)  
Figure 2. Typical Thermal Resistance  
1000  
7000  
5000  
sured value of T , the junction temperature may be deter-  
L
TYPICAL LEAKAGE CURRENT  
AT 80% OF NOMINAL  
BREAKDOWN VOLTAGE  
mined by:  
T = T + ∆T .  
JL  
2000  
1000  
J
L
∆T is the increase in junction temperature above the lead  
JL  
700  
temperature and may be found from Figure 2 for dc power:  
500  
∆T = θ P .  
JL JL D  
200  
For worst-case design, using expected limits of I , limits of  
Z
100  
70  
P andtheextremesofT (∆T )maybeestimated.Changesin  
D
J
J
50  
voltage, V , can then be found from:  
Z
∆V = θ T .  
VZ J  
20  
θ
, the zener voltage temperature coefficient, is found from  
VZ  
10  
7
Figures 4 and 5.  
5
Under high power-pulse operation, the zener voltage will  
vary with time and may also be affected significantly by the  
zenerresistance. Forbestregulation, keepcurrentexcursions  
as low as possible.  
Surge limitations are given in Figure 7. They are lower than  
would be expected by considering only junction temperature,  
as current crowding effects cause temperatures to be ex-  
tremely high in small spots, resulting in device degradation  
should the limits of Figure 7 be exceeded.  
2
1
0.7  
0.5  
+125°C  
0.2  
0.1  
0.07  
0.05  
0.02  
0.01  
0.007  
0.005  
+25°C  
0.002  
0.001  
3
4
5
6
7
8
9
10  
11  
12 13 14 15  
V , NOMINAL ZENER VOLTAGE (VOLTS)  
Z
Figure 3. Typical Leakage Current  
Motorola TVS/Zener Device Data  
500 mW DO-35 Glass Data Sheet  
6-3  
12345678

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