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1N747C PDF预览

1N747C

更新时间: 2024-01-04 10:53:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管齐纳二极管
页数 文件大小 规格书
3页 215K
描述
SILICON 400 mW ZENER DIODES

1N747C 技术参数

生命周期:Active包装说明:O-LELF-R2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.57
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-213AAJESD-30 代码:O-LELF-R2
JESD-609代码:e0元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:3.6 V
表面贴装:YES技术:ZENER
端子面层:TIN LEAD端子形式:WRAP AROUND
端子位置:END最大电压容差:10%
工作测试电流:20 mABase Number Matches:1

1N747C 数据手册

 浏览型号1N747C的Datasheet PDF文件第1页浏览型号1N747C的Datasheet PDF文件第3页 
1N746 thru 1N759A, -1 and  
1N4370 thru 1N4372A, -1 DO-35  
Silicon 500 mW Zener Diodes  
S C O T T S D A L E D I V I S I O N  
ELECTRICAL CHARACTERISTICS* @ 25oC  
NOMINAL  
ZENER  
MAXIMUM  
MAXIMUM REVERSE  
CURRENT IR  
MAXIMUM  
ZENER  
TYPICAL  
TEMP COEFF.  
OF ZENER  
VOLTAGE  
ZENER  
TEST  
ZENER  
JEDEC  
VOLTAGE  
VZ @ IZT  
(NOTE 2)  
CURRENT  
IZT  
IMPEDANCE  
ZZT @ IZT  
(NOTE 3)  
CURRENT  
IZM  
TYPE NO.  
@ VR = 1 VOLT  
α
(NOTE1)  
(NOTE 4)  
@25ºC  
µA  
@+150ºC  
µA  
VZ  
VOLTS  
2.4  
mA  
20  
OHMS  
30  
mA  
150  
135  
120  
%/oC  
-.085  
-.080  
-.075  
1N4370  
1N4371  
1N4372  
100  
75  
200  
2.7  
20  
30  
150  
3.0  
20  
29  
50  
100  
1N746  
1N747  
1N748  
1N749  
1N750  
1N751  
1N752  
1N753  
1N754  
1N755  
1N756  
1N757  
1N758  
1N759  
3.3  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6.2  
6.8  
7.5  
8.2  
9.1  
10.0  
12.0  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
28  
24  
23  
22  
19  
17  
11  
7
10  
10  
10  
2
30  
30  
30  
30  
30  
20  
20  
20  
20  
20  
20  
20  
20  
20  
110  
100  
95  
85  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
-.066  
-.058  
-.046  
-.033  
2
-.015  
1
+/-.010  
+.030  
+.049  
+.053  
+.057  
+.060  
+.061  
+.062  
+.062  
1
.1  
.1  
.1  
.1  
.1  
.1  
.1  
5
6
8
10  
17  
30  
* JEDEC Registered Data  
NOTE 1: Standard tolerance on JEDEC types shown is +/- 10%. Suffix letter A denotes +/- 5% tolerance; suffix  
letter C denotes +/- 2%; and suffix letter D denotes +/- 1% tolerance.  
NOTE 2: Voltage measurements to be performed 20 seconds after application of dc test current.  
NOTE 3: Zener impedance derived by superimposing on IZT, a 60 cps, rms ac current equal to 10% IZT (2mA ac). See MicroNote 202 for  
typical zener Impedance variation with different operating currents.  
NOTE 4: Allowance has been made for the increase in VZ due to ZZ and for the increase in junction temperature as the unit approaches  
thermal equilibrium at the power dissipation of 400 mW.  
GRAPHS  
TL – LEAD TEMPERATURE (oC) 3/8” FROM BODY or  
TA on FR4 PC BOARD  
NOMINAL ZENER VOLTAGE (VOLTS)  
FIGURE 1  
FIGURE 2  
POWER DERATING CURVE  
ZENER VOLTAGE TEMPERATURE  
COEFFICIENT vs. ZENER VOLTAGE  
Copyright 2003  
10-31-2003 REV B  
Microsemi  
Page 2  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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