Datasheet > 1N6383

1N6383

更新时间： 2024-01-02 23:51:36

品牌	Logo	应用领域
安森美 - ONSEMI		局域网二极管电视
页数	文件大小	规格书
8页	58K
描述
1500W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 41A-04, 2 PIN

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1N6383 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.8	Base Number Matches：	1

1N6383 数据手册

1N6382 - 1N6389 Series

(ICTE-10C - ICTE-36C,

MPTE-8C - MPTE-45C)

1500 Watt Peak Power

Mosorb Zener Transient

Voltage Suppressors

Bidirectional*

http://onsemi.com

Mosorb devices are designed to protect voltage sensitive

components from high voltage, high–energy transients. They have

excellent clamping capability, high surge capability, low zener

impedance and fast response time. These devices are

ON Semiconductor’s exclusive, cost-effective, highly reliable

Surmetic axial leaded package and are ideally-suited for use in

communication systems, numerical controls, process controls,

medical equipment, business machines, power supplies and many

other industrial/consumer applications, to protect CMOS, MOS and

Bipolar integrated circuits.

AXIAL LEAD

CASE 41A

PLASTIC

Specification Features:

• Working Peak Reverse Voltage Range – 8 V to 45 V

• Peak Power – 1500 Watts @ 1 ms

• ESD Rating of Class 3 (>16 KV) per Human Body Model

• Maximum Clamp Voltage @ Peak Pulse Current

• Low Leakage < 5 mA Above 10 V

MPTE

–xxC

63xx

YYWW

• Response Time is Typically < 1 ns

ICTE

–xxC

YYWW

Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230°C, 1/16″ from the case for 10 seconds

POLARITY: Cathode band does not imply polarity

MOUNTING POSITION: Any

L = Assembly Location

MPTE–xxC = ON Device Code

ICTE–xxC = ON Device Code

1N63xx = JEDEC Device Code

YY = Year

WW = Work Week

MAXIMUM RATINGS

ORDERING INFORMATION

Rating

Symbol

Value

Unit

Device

Package

Shipping

500 Units/Box

Peak Power Dissipation (Note 1)

1500

Watts

@ T ≤ 25°C

MPTE–xxC

Axial Lead

Steady State Power Dissipation

5.0

Watts

MPTE–xxCRL4

Axial Lead 1500/Tape & Reel

@ T ≤ 75°C, Lead Length = 3/8″

Derated above T = 75°C

mW/°C

°C/W

°C

ICTE–xxC*

Axial Lead

500 Units/Box

Thermal Resistance, Junction–to–Lead

ICTE–xxCRL4

Axial Lead 1500/Tape & Reel

Operating and Storage

Temperature Range

T , T

– 65 to

+175

stg

1N63xx

Axial Lead

500 Units/Box

1N63xxRL4

Axial Lead 1500/Tape & Reel

1. Nonrepetitive current pulse per Figure 4 and derated above T = 25°C

per Figure 2.

*ICTE–10C Not Available in 500 Units/Box

*Please see 1N6373 – 1N6381 (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)

for Unidirectional Devices

Semiconductor Components Industries, LLC, 2002

Publication Order Number:

1N6382/D

June, 2002 – Rev. 2

12 3 4 5 6 7 8

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与1N6383相关器件

型号	品牌	描述	获取价格	数据表
1N6383/100-E3	VISHAY	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup	获取价格
1N6383/4	VISHAY	Trans Voltage Suppressor Diode, 1500W, 10V V(RWM), Bidirectional, 1 Element, Silicon, PLAS	获取价格
1N6383/4E	VISHAY	Trans Voltage Suppressor Diode, 1500W, 10V V(RWM), Bidirectional, 1 Element, Silicon, PLAS	获取价格
1N6383/4-E3	VISHAY	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, 1.5KE, 2 PIN, Transient Suppress	获取价格
1N6383/4F-E3	VISHAY	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup	获取价格
1N6383/4H-E3	VISHAY	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup	获取价格

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