Datasheet > 1N6382/56-E3

1N6382/56-E3

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
4页	62K
描述
DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor

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1N6382/56-E3 数据手册

ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386

Vishay Semiconductors

formerly General Semiconductor

Ratings and

Characteristic Curves (T_A= 25°C unless otherwise noted)

Fig. 2 -- Pulse Derating Curve

Fig. 1 -- Peak Pulse Power Rating Curve

100

Non-repetitive Pulse

Waveform shown in Fig. 3

T_A= 25°C

0.1

0.1µs

1.0µs

10µs

100µs

1.0ms

10ms

td -- Pulse Width (sec.)

Fig. 3 -- Pulse Waveform

150

175

200

100

125

T_J= 25°C

Pulse Width (td) is defined

tr = 10µsec.

T_A-- Ambient Temperature (°C)

Peak Value

I_PPM

as the point where the

peak current decays to

50% of I_PPM

Fig. 4 -- Typical Junction Capacitance

Uni-Directional

100

Half Value – IPPM

100,000

10,000

1000

10/1000µsec. Waveform

as defined by R.E.A.

Measured at

Zero Bias

1.0

3.0

4.0

2.0

T_J= 25°C

f = 1.0MHz

Vsig = 50mVp-p

t -- Time (ms)

Measured at

Stand-Off

Voltage, V_WM

Fig. 5 -- Typical Junction Capacitance

100,000

10,000

1,000

100

Measured at

Zero Bias

Bidirectional Type

Non-repetitive Pulse

Waveform shown in Fig. 3

T_A= 25°C

100

1.0

100

200

V_(BR)-- Breakdown Voltage (V)

Measured at

Stand-Off

Voltage, V_WM

Fig. 6 -- Maximum Non-Repetitive Forward

Surge Current Uni-Directional Only

200

100

200

T_J= T_Jmax.

8.3ms Single Half Sine-Wave

(JEDEC Method)

V_(BR)-- Breakdown Voltage (V)

Fig. 7 --Typical Characteristics Clamping Voltage

100

Uni-Directional Only

T_A= 25°C

10 12 14 16 18 20 22 24 26 28

V_C-- Clamping Voltage (V)

100

Number of Cycles at 60 Hz

Document Number 88356

23-May-03

www.vishay.com

1 234

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