Datasheet > 1N6382

1N6382

更新时间： 2024-02-01 22:34:00

品牌	Logo	应用领域
威世 - VISHAY		二极管局域网
页数	文件大小	规格书
5页	98K
描述
TRANSZORB® Transient Voltage Suppressors

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技术参数
数据手册

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1N6382 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.73
Is Samacsys：	N	最大钳位电压：	11.6 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-609代码：	e0
极性：	BIDIRECTIONAL	最大重复峰值反向电压：	8 V
子类别：	Transient Suppressors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

1N6382 数据手册

ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA) (T = 25 °C unless otherwise noted)

MINIMUM ⁽³⁾

BREAKDOWN

VOLTAGE

MAXIMUM

REVERSE

LEAKAGE

AT V_WM

MAXIMUM

CLAMPING

VOLTAGE

MAXIMUM

CLAMPING

VOLTAGE AT

MAXIMUM

PEAK

PULSE

STAND-OFF

VOLTAGE

GENERAL

SEMICONDUCTOR

PART NUMBER

JEDEC TYPE

NUMBER

AT I_PP= 1.0 A

_PP= 10 A

_WM(V)

CURRENT

AT 1.0 mA

_PP(A)

I_D(µA)

V_C(V)

_BR(V)

UNI-DIRECTIONAL TYPES

1N6373 ⁽²⁾

1N6374

1N6375

1N6376

1N6377

1N6378

ICTE-5 ⁽²⁾

5.0

8.0

6.0

9.4

300

25.0

2.0

7.1

7.5

160

100

ICTE-8

11.3

13.7

16.1

20.1

24.2

11.5

14.1

16.5

20.6

25.2

ICTE-10

ICTE-12

ICTE-15

ICTE-18

10.0

12.0

15.0

18.0

11.7

14.1

17.6

21.2

2.0

BI-DIRECTIONAL TYPES

1N6382

1N6383

1N6384

1N6385

1N6386

ICTE-8C

ICTE-10C

ICTE-12C

ICTE-15C

ICTE-18C

8.0

9.4

50.0

2.0

11.4

14.1

16.7

20.8

24.8

11.6

14.5

17.1

21.4

25.5

100

10.0

12.0

15.0

18.0

11.7

14.1

17.6

21.2

Notes:

(1) “C” Suffix indicates bi-directional

(2) ICTE-5 and 1N6373 are not available as bi-directional

(3) The minimum breakdown voltage as shown takes into consideration the 1 V tolerance normally specified for power supply regulation on

most integrated circuit manufacturers data sheets. Please consult factory for devices that require reduced clamping voltages where tighter

regulated power supply voltages are employed

(4) Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; Clamping factor: the ratio of the actual V_C(Clamping Voltage) to the

_BR(Breakdown Voltage) as measured on a specific device

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

ICTE-5-E3/54

ICTE-5HE3/54 ⁽¹⁾

0.968

1400

13" diameter paper tape and reel

0.968

Note:

(1) Automotive grade AEC Q101 qualified

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88356

Revision: 21-Oct-08

123 4 5

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与1N6382相关器件

型号	品牌	描述	获取价格	数据表
1N6382/1	VISHAY	Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Bidirectional, 1 Element, Silicon, PLAST	获取价格
1N6382/100-E3	VISHAY	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup	获取价格
1N6382/4-E3	VISHAY	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, 1.5KE, 2 PIN, Transient Suppress	获取价格
1N6382/4F-E3	VISHAY	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup	获取价格
1N6382/4G-E3	VISHAY	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup	获取价格
1N6382/4H-E3	VISHAY	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup	获取价格

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