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1N6379RL4 PDF预览

1N6379RL4

更新时间: 2024-01-07 05:03:38
品牌 Logo 应用领域
安森美 - ONSEMI 瞬态抑制器二极管局域网
页数 文件大小 规格书
8页 80K
描述
1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors

1N6379RL4 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:O-PALF-W2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.53
Is Samacsys:N其他特性:EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE
最小击穿电压:25.9 V外壳连接:ISOLATED
最大钳位电压:32 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:5 W认证状态:Not Qualified
最大重复峰值反向电压:22 V子类别:Transient Suppressors
表面贴装:NO技术:ZENER
端子面层:Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

1N6379RL4 数据手册

 浏览型号1N6379RL4的Datasheet PDF文件第1页浏览型号1N6379RL4的Datasheet PDF文件第2页浏览型号1N6379RL4的Datasheet PDF文件第3页浏览型号1N6379RL4的Datasheet PDF文件第5页浏览型号1N6379RL4的Datasheet PDF文件第6页浏览型号1N6379RL4的Datasheet PDF文件第7页 
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)  
100  
NONREPETITIVE  
PULSE WAVEFORM  
SHOWN IN FIGURE 5  
100  
80  
60  
10  
40  
20  
0
1
0.1ꢀms  
1ꢀms  
10ꢀms  
100ꢀms  
1 ms  
10 ms  
0
25  
50  
75  
100 125 150 175 200  
T , AMBIENT TEMPERATURE (°C)  
A
t , PULSE WIDTH  
P
Figure 1. Pulse Rating Curve  
Figure 2. Pulse Derating Curve  
1N6373, ICTE-5, MPTE-5,  
through  
1N6389, ICTE-45, C, MPTE-45, C  
10,000  
1000  
MEASURED @  
ZERO BIAS  
MEASURED @ V  
RWM  
100  
10  
1
10  
100  
1000  
V
BR  
, BREAKDOWN VOLTAGE (VOLTS)  
Figure 3. Capacitance versus Breakdown Voltage  
PULSE WIDTH (t ) IS DEFINED AS  
P
THAT POINT WHERE THE PEAK  
CURRENT DECAYS TO 50% OF I  
t 10 ms  
r
3/8″  
.
PP  
PEAK VALUE − I  
PP  
100  
50  
0
3/8″  
5
4
3
I
PP  
HALF VALUE −  
2
2
t
P
1
0
0
1
2
t, TIME (ms)  
3
4
0
25  
50  
75  
100 125 150 175  
200  
T , LEAD TEMPERATURE (°C)  
L
Figure 4. Steady State Power Derating  
Figure 5. Pulse Waveform  
http://onsemi.com  
4
 

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