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1N6269AE3/TR PDF预览

1N6269AE3/TR

更新时间: 2024-01-16 10:55:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 380K
描述
Trans Voltage Suppressor Diode, 1500W, 7.02V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, CASE 1, 2 PIN

1N6269AE3/TR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-PALF-W2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.65其他特性:HIGH RELIABILITY
最大击穿电压:8.61 V最小击穿电压:7.79 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:1.52 W
认证状态:Not Qualified最大重复峰值反向电压:7.02 V
表面贴装:NO技术:AVALANCHE
端子面层:PURE MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N6269AE3/TR 数据手册

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TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
Unidirectional and Bidirectional  
Transient Voltage Suppressor  
- Economical series for thru hole mounting  
- Unidirectional (A) and Bidirectional (CA) construction  
- Selections for 6.8 to 400 V standoff voltages (VWM)  
LEVELS  
M, MA, MX, MXL  
DEVICES  
M1.5KE6.8A thru M1.5KE400CA, e3  
FEATURES  
.
.
.
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High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Suppresses transients up to 1500 watts @ 10/1000 µs  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes specify  
various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote  
129 for more details on the screening options.  
.
.
Surface mount equivalent packages are available as MSMC(G)(J)5.0A - SMC(G)(J)170CA  
(consult factory for other surface mount options)  
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
.
.
RoHS Compliant devices available by adding “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
CASE 1  
APPLICATIONS / BENEFITS  
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.
.
Protection from switching transients and induced RF  
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4 with fast response  
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:  
o
o
o
o
Class 1: M1.5KE6.8A to M1.5KE200CA  
Class 2: M1.5KE5.0A to M1.5KE180CA  
Class 3: M1.5KE5.0A to M1.5KE91CA  
Class 4: M1.5KE5.0A to M1.5KE43CA  
.
.
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:  
o
o
o
o
Class 1 : M1.5KE5.0A to M1.5KE110CA  
Class 2: M1.5KE5.0A to M1.5KE56CA  
Class 3: M1.5KE5.0A to M1.5KE27ACA  
Class 4: M1.5KE5.0A to M1.5KE13CA  
Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:  
o
o
Class 2: M1.5KE5.0A to M1.5KE24CA  
Class 3: M1.5KE5.0A to M1.5KE12CA  
MAXIMUM RATINGS  
º
.
Peak Pulse Power dissipation at 25 C: 1500 watts at 10/1000 μs (also see Figures 1, 2, and 3) with  
impulse repetition rate (duty factor) of 0.01 % or less  
.
.
.
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65 ºC to +150 ºC  
º
º
Thermal Resistance: 22 C/W junction to lead at 3/8 inch (10 mm) from body, or 82 C/W junction to  
ambient when mounted on FR4 PC board with 4 mm2 copper pads (1oz) and track width 1 mm, length 25  
mm  
.
Steady-State Power dissipation: 5 watts at TL = 40 ºC, or 1.52 watts at TA = 25ºC when mounted on FR4  
PC board described for thermal resistance  
.
.
Forward Surge: 200 Amps peak impulse of 8.3 ms half-sine wave at 25ºC (unidirectional only).  
Solder temperatures: 260 ºC for 10 s (maximum)  
RF01008 Rev B, August 2010  
High Reliability Product Group  
Page 1 of 4  

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