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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| 1N6159HRV | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, |
|
| 1N6159HRX | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, |
|
| 1N6159S | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, |
|
| 1N6159US | NJSEMI |
获取价格 |
Diode TVS Single Bi-Dir 38.8V 1.5KW 2-Pin SMD |
|
| 1N6159USE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 38.8V V(RWM), Bidirectional, 1 Element, Silicon, ME |
|
| 1N6159USV | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, |
|
| 1N6159USX | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, |
|
| 1N6159V | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, |
|
| 1N6159X | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, |
|
| 1N616 | ETC |
获取价格 |
GOLD BONDED DIODES(Low forward voltage, low power consumption) |
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塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
英特尔震撼发布：128核心256线程的至强6性能核处理器
SK海力士量产12层HBM3E，容量高达36GB
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
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