1N6074US

更新时间： 2024-02-12 04:16:17

品牌	Logo	应用领域
美高森美 - MICROSEMI		整流二极管局域网超快恢复二极管快速恢复二极管
页数	文件大小	规格书
3页	121K
描述
VOIDLESS HERMETICALLY SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS POWER RECTIFIERS

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技术参数
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1N6074US 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	零件包装代码：	MELF
包装说明：	O-LELF-R2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.28
Is Samacsys：	N	其他特性：	HIGH RELIABILITY
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	O-LELF-R2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
最高工作温度：	155 °C	最低工作温度：	-65 °C
最大输出电流：	0.85 A	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
最大重复峰值反向电压：	100 V	最大反向恢复时间：	0.03 µs
表面贴装：	YES	技术：	AVALANCHE
端子面层：	TIN LEAD	端子形式：	WRAP AROUND
端子位置：	END	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

1N6074US 数据手册

1N6073US thru 1N6081US

VOIDLESS HERMETICALLY SEALED

SURFACE MOUNT ULTRA FAST

RECOVERY GLASS POWER

RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is ideal for high-reliability

applications where a failure cannot be tolerated. These 3, 6, and 12 Amp rated

rectifiers (T_EC=70ºC) in different package sizes with working peak reverse

voltages from 50 to 150 volts are hermetically sealed using voidless-glass

construction and an internal “Category I” metallurgical bond. These devices

are also available in axial-lead package configurations for through-hole

mounting by deleting the “US” suffix (see separate data sheet for 1N6073 thru

1N6081). Microsemi also offers numerous other rectifier products to meet

higher and lower current ratings with various recovery time speed requirements

including standard, fast and ultrafast device types in both through-hole and

surface mount packages.

Package “A”

(or “D-5A”)

Package “E”

(or “D-5B”)

Package “G”

(or “D-5C”)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Popular 1N6073US to 1N6081US series

Voidless hermetically-sealed glass package

Extremely robust construction

•

Ultrafast recovery rectifier series 50 to 150 V

Military and other high-reliability applications

Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

High forward surge current capability

Low thermal resistance for higher power

Triple-layer passivation

Internal “Category I” Metallurgical bonds

•

Options for screening in accordance with MIL-PRF-

19500/503 for JAN, JANTX, JANTXV, or JANS by

using a MQ, MX, MV or MSP prefix respectively , e.g.

MX6076, MV6079, MSP6081, etc.

Controlled avalanche with peak reverse power

capability

•

Inherently radiation hard as described in Microsemi

MicroNote 050

•

Axial-leaded equivalents also available (see separate

data sheet for 1N6073 thru 1N6081)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction Temperature: -65^oC to +155^oC

Storage Temperature: -65^oC to +155^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

Peak Forward Surge Current @ 25^oC: 35 Amps for

1N6073US-6075US, 75 Amps for 1N6076US-6078US,

and 175 Amps for 1N6079US-6081US at 8.3 ms half-

sine wave

Average Rectified Forward Current (I_O) at T_EC= +70^oC:

1N6073US thru 1N6075US: 3.0 Amps

1N6076US thru 1N6078US: 6.0 Amps

1N6079US thru 1N6081US: 12.0 Amps

Average Rectified Forward Current (I_O) at T_A=55^oC:

1N6073US thru 1N6075US: 0.85 Amps

1N6076US thru 1N6078US: 1.3 Amps

1N6079US thru 1N6081US: 2.0 Amps

TERMINATIONS: End caps are Copper with

Tin/Lead (Sn/Pb) finish. Note: Previous inventory

had solid Silver end caps with Tin/Lead finish.

•

MARKING: None

•

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-481-B

Weight: 1N6073 thru 1N6075: 193 mg

1N6076 thru 1N6078: 539 mg

1N6079 thru 1N6081: 1100 mg

•

See package dimensions and recommended pad

layouts on last page for all three package sizes

•

Thermal Resistance (R_θ_JEC): 13^oC/W for 1N6073US-

6075US, 8.5^oC/W for 1N6076US-6078US, and

5.0^oC/W for 1N6079US-6081US

Solder temperature: 260^oC for 10 s (maximum)

1-17-2007 REV C

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

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1N6074US 替代型号

型号	品牌	替代类型	描述	数据表
JANTX1N6074	MICROSEMI	完全替代	Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, SIMILAR TO DO-35, 2 PIN
1N6074	MICROSEMI	完全替代	ULTRA FAST POWER RECTIFIERS

与1N6074US相关器件

型号	品牌	获取价格	描述	数据表
1N6075	SEMTECH	获取价格	RECTIFIER, up to 150V, 1.8A, 30ns
1N6075	MICROSEMI	获取价格	ULTRA FAST POWER RECTIFIERS
1N6075	NJSEMI	获取价格	Diode Switching 150V 3A 2-Pin Case A
1N6075US	MICROSEMI	获取价格	VOIDLESS HERMETICALLY SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS POWER RECTIFIERS
1N6076	SEMTECH	获取价格	RECTIFIER, up to 150V, 3.1A, 30ns
1N6076	NJSEMI	获取价格	Diode Switching 50V 6A 2-Pin Case E
1N6076	MICROSEMI	获取价格	ULTRA FAST POWER RECTIFIERS
1N6076E3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, HERMETIC SEALED, GLASS, E, 2 PIN
1N6076US	MICROSEMI	获取价格	VOIDLESS HERMETICALLY SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS POWER RECTIFIERS
1N6077	MICROSEMI	获取价格	ULTRA FAST POWER RECTIFIERS

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