Datasheet > 1N5822/51-E3

1N5822/51-E3

更新时间： 2023-01-02 22:40:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	184K
描述
DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N5822/51-E3 数据手册

1N5820, 1N5821 & 1N5822

Vishay General Semiconductor

1,000

= 125°C

= 25 °C

f=1.0 MH

Pulse Width = 300 µs

1% Duty Cycle

=50mVp-p

sig

100

= 25°C

0.1

0.01

0.1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.0

100

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Figure 5. Typical Junction Capacitance

Figure 3. Typical Instantaneous Forward Characteristics

100

= 125°C

= 75°C

0.1

= 25°C

0.01

0.001

0.1

100

0.1

100

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Characteristics

t, Pulse Duration (sec.)

Figure 6. Typical Transient Thermal Impedance

Package outline dimensions in inches (millimeters)

DO-201AD

1.0 (25.4)

Min.

0.210 (5.3)

0.190 (4.8)

Dia.

0.375 (9.5)

0.285 (7.2)

1.0 (25.4)

Min.

0.052 (1.32)

0.048 (1.22)

Dia.

Document Number 88526

13-Jul-05

www.vishay.com

1 234

下载PDF

与1N5822/51-E3相关器件

型号	品牌	描述	获取价格	数据表
1N5822/54	VISHAY	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, PLASTIC	获取价格
1N5822/54-E3	VISHAY	DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode	获取价格
1N5822/56	VISHAY	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, PLASTIC	获取价格
1N5822/56-E3	VISHAY	DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode	获取价格
1N5822/58-E3	VISHAY	DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode	获取价格
1N5822/60	VISHAY	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, PLASTIC	获取价格