1N5394GP-BP-HF

更新时间： 2024-01-27 15:23:38

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
3页	80K
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数据手册

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1N5394GP-BP-HF 数据手册

1N5391

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

THRU

1N5399

Features

Low Current Leakage

Low Forward Voltage

High Current Capability

Low Cost

1.5 Amp Rectifier

50 - 1000 Volts

Maximum Ratings

DO-15

Operating Temperature: -55°C to +125°C

Storage Temperature: -55°C to +150°C

Typical Thermal Resistance; 26°C/W Junction To Lead

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

Maximum Maximum

RMS

Voltage

Blocking

Voltage

1N5391

1N5392

1N5393

1N5394

1N5395

1N5396

1N5397

1N5398

1N5399

---

50V

100V

200V

300V

400V

500V

600V

800V

1000V

35V

70V

50V

100V

200V

300V

400V

500V

600V

800V

1000V

Cathode

Mark

140V

210V

280V

350V

420V

560V

700V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

1.5A

T_A= 70°C

Peak Forward Surge

Current

I_FSM

50A

8.3ms, half sine**

Maximum

DIMENSIONS

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

V_F

I_R

1.1V

I_FM= 1.5A;

T_J= 25°C*

INCHES

MIN

.230

.104

.026

MIN

5.80

2.60

.70

DIM

MAX

.300

.140

.034

---

MAX

7.60

3.60

.90

NOTE

5.0mA

50mA

T_J= 25°C

T_J= 100°C

1.000

25.40

---

Typical Junction

Capacitance

C_J

20pF

Measured at

1.0MHz, V_R=4.0V

*Pulse test: Pulse width 300 msec, Duty cycle 1%

**8.3ms single half-wave superimposed on rated load(JEDEC method)

at Ta=75 deg C.

www.mccsemi.com

12 3

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