Datasheet > 1N5250BTA

1N5250BTA

更新时间： 2023-02-26 15:08:57

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
9页	124K
描述
20V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, GLASS PACKAGE-2

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1N5250BTA 数据手册

1N5223B through 1N5258B

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Value

500

Unit

Power dissipation

Surge power dissipation

Lead temperature

Junction temperature

Storage temperature

Pd(surge) *¹

T_L*²

Tj *³

230

°C

200

°C

Tstg

–65 to +200

°C

Notes: 1. Non-recurrent square wave, pw = 8.3 ms, Tj = 55°C, Tj is prior to surge.

2. Less than 1/16" from the case for 10 seconds.

3. By standard printed board, see fig 2.

Electrical Characteristics

(Ta = 25°C)

V_Z(V)

I_R(µA)

Z_ZT(Ω)

Z_ZK(Ω)

γ_Z(%/°C) *¹V_F*²(V)

Test

Condition

Test

Condition

Test

Condition

Test

Condition

I_Z(mA) Max

V_R(V)

1.0

2.0

3.0

3.5

4.0

5.0

6.0

6.5

Max

I_ZT(mA) Max

I_ZK(mA) Max

Max

1.1

1N5223B 2.7 5 (%) 20

1N5224B 2.8 5 (%) 20

1N5225B 3.0 5 (%) 20

1N5226B 3.3 5 (%) 20

1N5227B 3.6 5 (%) 20

1N5228B 3.9 5 (%) 20

1N5229B 4.3 5 (%) 20

1N5230B 4.7 5 (%) 20

1N5231B 5.1 5 (%) 20

1N5232B 5.6 5 (%) 20

1N5233B 6.0 5 (%) 20

1N5234B 6.2 5 (%) 20

1N5235B 6.8 5 (%) 20

1N5236B 7.5 5 (%) 20

1N5237B 8.2 5 (%) 20

1N5238B 8.7 5 (%) 20

1300 0.25

1400 0.25

-0.08

1600 0.25

1700 0.25

1900 0.25

2000 0.25

1900 0.25

1600 0.25

1000 0.25

-0.075

-0.07

-0.065

-0.06

0.055

0.03

+0.038

+0.045

+0.05

+0.058

+0.062

+0.065

750

500

600

0.25

Notes: 1. 1N5223 to 1N5242: I_Z= 7.5 mA, 1N5243 to 1N5258: I_Z= I_Z,, Ta = 25°C to 125°C

2. Tested with DC, I_F= 200 mA

Rev.2, Dec. 2001, page 2 of 7

1 2 345 6 7...9

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