生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.74 | 其他特性: | LOW NOISE |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | ZENER DIODE |
JEDEC-95代码: | DO-35 | JESD-30 代码: | O-LALF-W2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -65 °C | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
最大功率耗散: | 0.5 W | 认证状态: | Not Qualified |
标称参考电压: | 12.8 V | 表面贴装: | NO |
技术: | ZENER | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | AXIAL |
电压温度Coeff-Max: | 0.128 mV/ °C | 最大电压容差: | 5% |
工作测试电流: | 0.5 mA | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N4899AE3 | MICROSEMI |
获取价格 |
Zener Diode, 12.8V V(Z), 5%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS PACAKGE-2 | |
1N4899E3 | MICROSEMI |
获取价格 |
Zener Diode, 12.8V V(Z), 5%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS PACAKGE-2 | |
1N49 | NJSEMI |
获取价格 |
GOLD BONDED GERMANIUM DIODES | |
1N490 | ETC |
获取价格 |
GOLD BONDED DIODES(Low forward voltage, low power consumption) | |
1N4900 | DIGITRON |
获取价格 |
Temperature Compensated Zener Diode; Max Peak Repetitive Reverse Voltage: 12.16; Max TMS B | |
1N4900 | NJSEMI |
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Diode | |
1N4900 | MICROSEMI |
获取价格 |
12.8 VOLT LOW NOISE TEMPERATURE COMPENSATED ZENER REFERENCE DIODES | |
1N4900 | CDI-DIODE |
获取价格 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES | |
1N4900-1 | CDI-DIODE |
获取价格 |
Zener Diode, 12.8V V(Z), 5%, 0.5W, Silicon, DO-35, | |
1N4900A | MICROSEMI |
获取价格 |
12.8 VOLT LOW NOISE TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |