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1N4753ADRL PDF预览

1N4753ADRL

更新时间: 2024-01-27 19:52:09
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 测试二极管
页数 文件大小 规格书
9页 113K
描述
Zener Diode, 36V V(Z), 1%, 1W, Silicon, Unidirectional, DO-41

1N4753ADRL 技术参数

生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.07
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-LALF-W2
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:1 W认证状态:Not Qualified
标称参考电压:36 V表面贴装:NO
技术:ZENER端子形式:WIRE
端子位置:AXIAL最大电压容差:1%
工作测试电流:7 mA

1N4753ADRL 数据手册

 浏览型号1N4753ADRL的Datasheet PDF文件第1页浏览型号1N4753ADRL的Datasheet PDF文件第2页浏览型号1N4753ADRL的Datasheet PDF文件第3页浏览型号1N4753ADRL的Datasheet PDF文件第5页浏览型号1N4753ADRL的Datasheet PDF文件第6页浏览型号1N4753ADRL的Datasheet PDF文件第7页 
GENERAL DATA — 1–1.3 WATT DO-41 GLASS  
APPLICATION NOTE  
Since the actual voltage available from a given zener diode  
temperature and may be found as follows:  
is temperature dependent, it is necessary to determine junc-  
tiontemperatureunderanysetofoperatingconditionsinorder  
to calculate its value. The following procedure is recom-  
mended:  
T = θ P .  
JL JL D  
θ
may be determined from Figure 3 for dc power condi-  
JL  
tions. For worst-case design, using expected limits of I , limits  
Z
ofP andtheextremesofT (T )maybeestimated.Changes  
D
J
J
Lead Temperature, T , should be determined from:  
L
in voltage, V , can then be found from:  
Z
T = θ  
L
P
LA D  
+ T .  
A
V = θ  
T .  
J
VZ  
, the zener voltage temperature coefficient, is found from  
θ
isthelead-to-ambientthermalresistance(°C/W)andP is  
LA  
D
θ
VZ  
Figure 2.  
Under high power-pulse operation, the zener voltage will  
thepower dissipation. The value for θ willvaryanddepends  
onthedevicemountingmethod.θ isgenerally30to40°C/W  
for the various clips and tie points in common use and for  
printed circuit board wiring.  
LA  
LA  
vary with time and may also be affected significantly by the  
zenerresistance. Forbestregulation, keepcurrentexcursions  
as low as possible.  
Surge limitations are given in Figure 5. They are lower than  
would be expected by considering only junction temperature,  
as current crowding effects cause temperatures to be ex-  
tremely high in small spots, resulting in device degradation  
should the limits of Figure 5 be exceeded.  
The temperature of the lead can also be measured using a  
thermocoupleplacedontheleadascloseaspossibletothetie  
point. The thermal mass connected to the tie point is normally  
large enough so that it will not significantly respond to heat  
surges generated in the diode as a result of pulsed operation  
once steady-state conditions are achieved. Using the mea-  
sured value of T , the junction temperature may be deter-  
L
mined by:  
T = T + T .  
JL  
J
L
T is the increase in junction temperature above the lead  
JL  
Motorola TVS/Zener Device Data  
1–1.3 Watt DO-41 Glass Data Sheet  
6-23  

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