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1N4696TAP

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1N4696TAP 数据手册

1N4678 to 1N4717

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

www.vishay.com

Document Number 85586

Rev. 1.4, 18-Feb-05

1...3 4 567

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型号	品牌	描述	获取价格	数据表
1N4696TR	CENTRAL	Zener Diode, 9.1V V(Z), 0.25W, Silicon, Unidirectional, DO-35,	获取价格
1N4696TR	MICROSEMI	Zener Diode, 9.1V V(Z), 5%, 0.417W, Silicon, Unidirectional, DO-204AA, HERMETIC SEALED, GL	获取价格
1N4696TR	VISHAY	暂无描述	获取价格
1N4696-TR	VISHAY	Zener Diode, 9.1V V(Z), 5%, 0.5W,	获取价格
1N4696TRLEADFREE	CENTRAL	Zener Diode, 9.1V V(Z), 0.25W, Silicon, Unidirectional, DO-35,	获取价格
1N4696TR-RECU	CENTRAL	Zener Diode, 9.1V V(Z), 0.25W, Silicon, Unidirectional, DO-35,	获取价格