Datasheet > 1N4693TR

1N4693TR

更新时间： 2023-02-26 14:22:48

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	324K
描述
Zener Diode, 7.5V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN

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1N4693TR 数据手册

1N4678 thru 1N4717-1 DO-7

500 mW AXIAL-LEADED ZENER DIODES

S C O T T S D A L E D I V I S I O N

*ELECTRICAL CHARACTERISTICS @ 25ºC

JEDEC

NOMINAL

ZENER

VOLTAGE

(Note 3)

V_Z

ZENER

MAXIMUM

MAXIMUM REVERSE

LEAKAGE CURRENT

MAXIMUM

TYPE

TEST

VOLTAGE

REGULATION

(Note 2 & 3)

∆V_Z

DC ZENER

CURRENT*

NUMBER

CURRENT

(Note 1)

I_ZT

I_R@ V_R

I_ZM

VOLTS

µA

7.5

1N4678

1N4679

1N4680

1N4681

1N4682

1N4683

1N4684

1N4685

1N4686

1N4687

1N4688

1N4689

1N4690

1N4691

1N4692

1N4693

1N4694

1N4695

1N4696

1N4697

1N4698

1N4699

1N4700

1N4701

1N4702

1N4703

1N4704

1N4705

1N4706

1N4707

1N4708

1N4709

1N4710

1N4711

1N4712

1N4713

1N4714

1N4715

1N4716

1N4717

1.8

2.0

0.70

0.75

0.80

0.85

0.90

0.95

0.97

0.99

0.97

0.96

0.95

0.90

0.75

0.50

0.10

0.08

0.10

0.11

0.12

0.13

0.14

0.15

0.16

0.17

0.18

0.19

0.20

0.22

0.24

0.25

0.27

0.28

0.30

0.33

0.36

0.39

0.43

1.0

240

220

200

190

180

170

160

150

140

130

120

110

100

5.0

2.2

4.0

1.0

2.4

2.0

1.0

2.7

1.0

3.0

0.8

1.0

3.3

7.5

1.5

3.6

7.5

2.0

3.9

5.0

2.0

4.3

4.0

2.0

4.7

10.0

1.0

3.0

5.1

3.0

5.6

4.0

6.2

5.0

6.8

5.1

7.5

5.7

63.6

58.0

54.8

52.4

49.6

43.2

40.8

38.0

35.0

32.6

30.8

29.0

26.4

25.0

23.8

21.6

19.8

19.0

17.6

17.0

15.8

14.4

13.2

12.2

11.0

8.2

6.2

8.7

1.0

6.6

9.1

1.0

6.9

10.0

11.0

12.0

13.0

14.0

15.0

16.0

17.0

18.0

19.0

20.0

22.0

24.0

25.0

27.0

28.0

30.0

33.0

36.0

39.0

43.0

1.0

7.6

0.05

0.01

8.4

9.1

9.8

10.6

11.4

12.1

12.9

13.6

14.4

15.2

16.7

18.2

19.0

20.4

21.2

22.8

25.0

27.3

29.6

32.6

*JEDEC registered data except I_ZMhas been increased (doubled) for 500 mW power dissipation capabilities

NOTES: 1. All types as shown are +/-5% tolerance. Also available in 2% and 1% tolerance by adding suffix C and D respectively.

2. ∆V_Z@ 100µA minus V_Z@ 10µA.

3. The electrical characteristics are measured after allowing the device to stabilize for 20 seconds when mounted with 3/8”

minimum lead length from the base.

Microsemi

Page 2

11-05-2003 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

123

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