Datasheet > 1N4383GP/4H

1N4383GP/4H

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	327K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

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1N4383GP/4H 数据手册

1N4383GP thru 1N4385GP

1N4585GP & 1N4586GP

Vishay General Semiconductor

100

TJ = 25 °C

f = 1.0 MHz

V^sig= 50mVp-p

Pulse Width = 300 µs

1% Duty Cycle

TJ = 25 °C

0.1

0.01

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

Reverse Voltage (V)

Instantaneous Forward Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 5. Typical Junction Capacitance

100

TJ = 125 °C

0.1

= 75 °C

= 25 °C

0.01

0.1

0.01

100

0.1

100

t - Pulse Duration (sec.)

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Characteristics

Figure 6. Typical Transient Thermal Impedance

Package outline dimensions in inches (millimeters)

DO-204AC (DO-15)

0.034 (0.86)

0.028 (0.71)

Dia.

1.0 (25.4)

min.

0.300 (7.6)

0.230 (5.8)

0.140 (3.6)

0.104 (2.6)

Dia.

1.0 (25.4)

min.

Document Number 88507

14-Oct-05

www.vishay.com

1 234

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